Patents by Inventor Ryouta Saisyo

Ryouta Saisyo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP fluid and method for polishing palladium
    Patent number: 10796921
    Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: October 6, 2020
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
  • Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP
    Patent number: 8900473
    Abstract: The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: December 2, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Hisataka Minami, Ryouta Saisyo, Hiroshi Ono
  • CMP Fluid and Method for Polishing Palladium
    Publication number: 20120100718
    Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.
    Type: Application
    Filed: February 5, 2010
    Publication date: April 26, 2012
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
  • POLISHING SOLUTION FOR CMP, AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING SOLUTION FOR CMP
    Publication number: 20110177690
    Abstract: The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles.
    Type: Application
    Filed: July 23, 2009
    Publication date: July 21, 2011
    Applicant: Hitachi Ltd.
    Inventors: Hisataka Minami, Ryouta Saisyo, Hiroshi Ono