Patents by Inventor Ryouta TANAKA

Ryouta TANAKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 11973108
    Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.
    Type: Grant
    Filed: December 1, 2020
    Date of Patent: April 30, 2024
    Assignees: NISSAN MOTOR CO., LTD., RENAULT S.A.S.
    Inventors: Wei Ni, Tetsuya Hayashi, Keiichiro Numakura, Toshiharu Marui, Ryouta Tanaka, Yuichi Iwasaki
  • Semiconductor device
    Patent number: 11973135
    Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: April 30, 2024
    Assignee: NISSAN MOTOR CO., LTD.
    Inventors: Keisuke Takemoto, Tetsuya Hayashi, Wei Ni, Toshiharu Marui, Ryouta Tanaka, Shigeharu Yamagami
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20240055475
    Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.
    Type: Application
    Filed: December 1, 2020
    Publication date: February 15, 2024
    Applicants: NISSAN MOTOR CO., LTD., RENAULT s.a.s.
    Inventors: Wei NI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Toshiharu MARUI, Ryouta TANAKA, Yuichi IWASAKI
  • SEMICONDUCTOR DEVICE
    Publication number: 20200365717
    Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.
    Type: Application
    Filed: February 6, 2018
    Publication date: November 19, 2020
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Keisuke TAKEMOTO, Tetsuya HAYASHI, Wei NI, Toshiharu MARUI, Ryouta TANAKA, Shigeharu YAMAGAMI