Abstract: A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion. A liner structure surrounds a plasma processing space disposed above the substrate support, and includes an inner cylindrical liner and an outer cylindrical liner. The inner cylindrical liner has a plurality of third openings, each of the plurality of third openings having a fourth width. The outer cylindrical liner has a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.

Abstract: There is a plasma processing apparatus comprising: a conductive chamber made of a first conductive material and connected to a ground potential; a plasma generator configured to generate a plasma in the conductive chamber; a plurality of conductive liners made of a second conductive material different from the first conductive material and arranged in a circumferential direction in the conductive chamber, each conductive liner having a first surface and a second surface opposite to the first surface, the first surface being in contact with a sidewall of the conductive chamber, the second surface being exposed to the plasma, a gap being formed between two adjacent conductive liners among the plurality of conductive liners; and a plurality of fixing mechanisms respectively corresponding to the plurality of conductive liners, each fixing mechanism being configured to fix a corresponding conductive liner to the sidewall of the conductive chamber.

Abstract: A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion. A liner structure surrounds a plasma processing space disposed above the substrate support, and includes an inner cylindrical liner and an outer cylindrical liner. The inner cylindrical liner has a plurality of third openings, each of the plurality of third openings having a fourth width. The outer cylindrical liner has a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a plasma generator configured to generate a plasma in the plasma processing chamber; a substrate support disposed in the plasma processing chamber; a first conductive ring disposed to surround a substrate on the substrate support; an insulating ring disposed to surround the first conductive ring; and a second conductive ring disposed to surround the insulating ring, and connected to a ground potential.

Abstract: A chamber is provided where an exhaust port for exhausting a gas in an inside thereof is formed thereon and substrate processing for a substrate is executed in the inside. A partition member partitions the inside of the chamber into a processing region where the substrate processing is executed and an exhaust region that leads to the exhaust port. The partition member is configured to include a plurality of plate-shaped members. The plurality of plate-shaped members are provided in such a manner that at least a part of each thereof is arranged obliquely at intervals in a side view from a side of a side surface of the chamber and an upper end part of each thereof is arranged so as to overlap with a lower end part of the plate-shaped member that is adjacent thereto in a top view from an upper side of the chamber.