Patents by Inventor Ryozaburo Nogawa

Ryozaburo Nogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor optical element, semiconductor optical element forming structure, and method of manufacturing semiconductor optical element using the same
    Patent number: 11799270
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: October 24, 2023
    Assignees: Fujikura Ltd., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada
  • SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMING STRUCTURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT USING THE SAME
    Publication number: 20220294188
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Application
    Filed: June 1, 2022
    Publication date: September 15, 2022
    Applicants: Fujikura Ltd., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada
  • Semiconductor optical element, semiconductor optical element forming structure, and method for manufacturing semiconductor optical element using the same
    Patent number: 11387628
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: July 12, 2022
    Assignees: FUJIKURA LTD., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada
  • SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMING STRUCTURE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT USING THE SAME
    Publication number: 20200403381
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Application
    Filed: February 22, 2019
    Publication date: December 24, 2020
    Applicants: Fujikura Ltd., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada