Patents by Inventor Ryu ARAKI
Ryu ARAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230188074Abstract: A semiconductor apparatus includes: a power semiconductor element; a control chip including a plurality of terminals including a first terminal and a second terminal, and being configured to control the power semiconductor element using a power supply voltage supplied to the second terminal; a first conductor for supplying a predetermined control voltage to the first terminal; a first line for supplying the power supply voltage to the second terminal; and semiconductor chip including a diode that is used for a bootstrap operation for generating the power supply voltage.Type: ApplicationFiled: October 28, 2022Publication date: June 15, 2023Applicant: FUJI ELECTRIC CO., LTD.Inventor: Ryu ARAKI
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Patent number: 11621709Abstract: A power module, including a high-side switching element and a low-side switching element connected to form a half bridge circuit, a high-side drive circuit which drives the high-side switching element, a low-side drive circuit which drives the low-side switching element, and a high-side current detection circuit which detects a current of the high-side switching element. The high-side drive circuit includes a high-side variable delay circuit which adjusts, according to a value detected by the high-side current detection circuit, a length of a high-side delay time from a time when a signal is inputted to the high-side drive circuit to a time when the high-side switching element is driven.Type: GrantFiled: March 24, 2021Date of Patent: April 4, 2023Assignee: FUJI ELECTRIC CO., LTD.Inventor: Ryu Araki
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Patent number: 11506701Abstract: The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method is provided which includes causing one of a first device and a second device of a semiconductor device to perform a switching operation, the semiconductor device comprising the first device and second device connected in series and a third device and a fourth device connected to each other in series and connected parallel to a series circuit of the first device and second device; measuring voltage variation occurring between the third device and the fourth device during the switching operation; and outputting an evaluation benchmark for electromagnetic noise of the semiconductor device, based on the voltage variation.Type: GrantFiled: November 25, 2019Date of Patent: November 22, 2022Assignee: FUJI ELECTRIC CO., LTD.Inventors: Miwako Fujita, Michio Tamate, Tamiko Asano, Yuhei Suzuki, Ryu Araki
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Publication number: 20210384333Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.Type: ApplicationFiled: August 24, 2021Publication date: December 9, 2021Inventors: Shigeki SATO, Toshiyuki MATSUI, Ryu ARAKI, Hiroshi MIYATA, Soichi YOSHIDA
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Publication number: 20210384331Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.Type: ApplicationFiled: August 24, 2021Publication date: December 9, 2021Inventors: Shigeki SATO, Ryu ARAKI, Hiroshi MIYATA, Soichi YOSHIDA
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Publication number: 20210359676Abstract: A power module, including a high-side switching element and a low-side switching element connected to form a half bridge circuit, a high-side drive circuit which drives the high-side switching element, a low-side drive circuit which drives the low-side switching element, and a high-side current detection circuit which detects a current of the high-side switching element. The high-side drive circuit includes a high-side variable delay circuit which adjusts, according to a value detected by the high-side current detection circuit, a length of a high-side delay time from a time when a signal is inputted to the high-side drive circuit to a time when the high-side switching element is driven.Type: ApplicationFiled: March 24, 2021Publication date: November 18, 2021Applicant: FUJI ELECTRIC CO., LTD.Inventor: Ryu ARAKI
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Patent number: 11162993Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.Type: GrantFiled: January 29, 2019Date of Patent: November 2, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hiroki Katsumata, Michio Tamate, Miwako Fujita, Tamiko Asano, Yuhei Suzuki, Takashi Kaimi, Yuta Sunasaka, Tadanori Yamada, Ryu Araki, Bao Cong Hiu
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Patent number: 11143691Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.Type: GrantFiled: January 29, 2019Date of Patent: October 12, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hiroki Katsumata, Michio Tamate, Miwako Fujita, Tamiko Asano, Yuhei Suzuki, Takashi Kaimi, Yuta Sunasaka, Tadanori Yamada, Ryu Araki, Bao Cong Hiu
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Patent number: 11050358Abstract: A power module including a half bridge circuit having first and second switching elements respectively included in an upper arm and a lower arm thereof, and upper and lower arm drive circuits which respectively drive the first and second switching elements. The power module includes a first ground terminal on a ground side of the second switching element, a second ground terminal connected, via a first ground wiring, to the first ground terminal, a third ground terminal connected, via a second ground wiring including a dumping resistor, to the first ground terminal, a current detection circuit detecting a current flowing through the second switching element, and a control ground switching circuit which performs switching according to a value of the current detected by the current detection circuit, so as to connect a ground terminal of the lower arm drive circuit to the second or third ground terminal.Type: GrantFiled: June 23, 2020Date of Patent: June 29, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventor: Ryu Araki
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Patent number: 10985749Abstract: A semiconductor device having a switch circuit and an integrated circuit. The switch circuit includes serially-connected first and second switching devices respectively on a power supply side and a ground side thereof, and first and second free-wheeling diodes connected respectively in parallel with the first and second switching devices. The integrated circuit performs switching of the second switching device, and including a detection circuit that detects a load current flowing through a load of the switch circuit, and a drive circuit that controls magnitude of a current flowing to the gate terminal of the second switching device, to thereby charge a gate capacitance of the second switching device according to a detection result of the detection circuit, when a received drive signal is at one logic level, and turns off the second switching device when the received drive signal is at another logic level.Type: GrantFiled: May 21, 2020Date of Patent: April 20, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventor: Ryu Araki
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Publication number: 20200395930Abstract: A semiconductor device having a switch circuit and an integrated circuit. The switch circuit includes serially-connected first and second switching devices respectively on a power supply side and a ground side thereof, and first and second free-wheeling diodes connected respectively in parallel with the first and second switching devices. The integrated circuit performs switching of the second switching device, and including a detection circuit that detects a load current flowing through a load of the switch circuit, and a drive circuit that controls magnitude of a current flowing to the gate terminal of the second switching device, to thereby charge a gate capacitance of the second switching device according to a detection result of the detection circuit, when a received drive signal is at one logic level, and turns off the second switching device when the received drive signal is at another logic level.Type: ApplicationFiled: May 21, 2020Publication date: December 17, 2020Applicant: FUJI ELECTRIC CO., LTD.Inventor: Ryu ARAKI
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Publication number: 20200321901Abstract: A power module including a half bridge circuit having first and second switching elements respectively included in an upper arm and a lower arm thereof, and upper and lower arm drive circuits which respectively drive the first and second switching elements. The power module includes a first ground terminal on a ground side of the second switching element, a second ground terminal connected, via a first ground wiring, to the first ground terminal, a third ground terminal connected, via a second ground wiring including a dumping resistor, to the first ground terminal, a current detection circuit detecting a current flowing through the second switching element, and a control ground switching circuit which performs switching according to a value of the current detected by the current detection circuit, so as to connect a ground terminal of the lower arm drive circuit to the second or third ground terminal.Type: ApplicationFiled: June 23, 2020Publication date: October 8, 2020Applicant: FUJI ELECTRIC CO., LTD.Inventor: Ryu ARAKI
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Publication number: 20200217884Abstract: The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method is provided which includes causing one of a first device and a second device of a semiconductor device to perform a switching operation, the semiconductor device comprising the first device and second device connected in series and a third device and a fourth device connected to each other in series and connected parallel to a series circuit of the first device and second device; measuring voltage variation occurring between the third device and the fourth device during the switching operation; and outputting an evaluation benchmark for electromagnetic noise of the semiconductor device, based on the voltage variation.Type: ApplicationFiled: November 25, 2019Publication date: July 9, 2020Inventors: Miwako FUJITA, Michio TAMATE, Tamiko ASANO, Yuhei SUZUKI, Ryu ARAKI
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Patent number: 10320278Abstract: There is provided a semiconductor device capable of decreasing a switching loss. The semiconductor device has first semiconductor elements (Su)-(Sw) and second semiconductor elements (Sx)-(Sz) connected in series, in which the first semiconductor element includes a low switching loss semiconductor element having a switching loss which is smaller than a switching loss of the second semiconductor element and the second semiconductor element includes a low conduction loss semiconductor element having a conduction loss which is smaller than a conduction loss of the first semiconductor element.Type: GrantFiled: July 24, 2017Date of Patent: June 11, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventor: Ryu Araki
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Publication number: 20190170798Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.Type: ApplicationFiled: January 29, 2019Publication date: June 6, 2019Inventors: Hiroki KATSUMATA, Michio TAMATE, Miwako FUJITA, Tamiko ASANO, Yuhei SUZUKI, Takashi KAIMI, Yuta SUNASAKA, Tadanori YAMADA, Ryu ARAKI, Bao Cong HIU
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Publication number: 20190170807Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.Type: ApplicationFiled: January 29, 2019Publication date: June 6, 2019Inventors: Hiroki KATSUMATA, Michio TAMATE, Miwako FUJITA, Tamiko ASANO, Yuhei SUZUKI, Takashi KAIMI, Yuta SUNASAKA, Tadanori YAMADA, Ryu ARAKI, Bao Cong HIU
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Patent number: 10186946Abstract: A switching element driving device for driving first and second switching elements of a half bridge circuit, the first and second switching elements being respectively formed in upper and lower arm units of the half bridge, and having respectively first and second freewheeling diodes connected thereto in antiparallel. The switching element driving device includes upper and lower arm driving circuits respectively configured to output first and second driving signals for driving the first and second switching elements, and a drive capability decision circuit configured to, responsive to turning on of the first switching element, set drive capability of the first driving signal to a first level and to change the drive capability of the first driving signal to a second level upon detecting a reverse recovery current of the second freewheeling diode of the second switching element, the first level being higher than the second level.Type: GrantFiled: February 28, 2018Date of Patent: January 22, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventor: Ryu Araki
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Publication number: 20180294709Abstract: A switching element driving device for driving first and second switching elements of a half bridge circuit, the first and second switching elements being respectively formed in upper and lower arm units of the half bridge, and having respectively first and second freewheeling diodes connected thereto in antiparallel. The switching element driving device includes upper and lower arm driving circuits respectively configured to output first and second driving signals for driving the first and second switching elements, and a drive capability decision circuit configured to, responsive to turning on of the first switching element, set drive capability of the first driving signal to a first level and to change the drive capability of the first driving signal to a second level upon detecting a reverse recovery current of the second freewheeling diode of the second switching element, the first level being higher than the second level.Type: ApplicationFiled: February 28, 2018Publication date: October 11, 2018Applicant: FUJI ELECTRIC CO., LTD.Inventor: Ryu ARAKI
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Patent number: 10090778Abstract: A multi-phase power device for driving an inductive load includes a first semiconductor device and a second semiconductor device connected in series in each of three phase arms. Each first semiconductor device includes a first switching device made of a wide-bandgap semiconductor and a freewheeling diode that is made of a narrow-bandgap semiconductor and is connected in anti-parallel to the first switching devices. Each second semiconductor device includes a second switching devices made of a wide-bandgap semiconductor and a freewheeling diode connected in anti-parallel to the second switching device.Type: GrantFiled: January 5, 2018Date of Patent: October 2, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventor: Ryu Araki
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Publication number: 20180234032Abstract: A multi-phase power device for driving an inductive load includes a first semiconductor device and a second semiconductor device connected in series in each of three phase arms. Each first semiconductor device includes a first switching device made of a wide-bandgap semiconductor and a freewheeling diode that is made of a narrow-bandgap semiconductor and is connected in anti-parallel to the first switching devices. Each second semiconductor device includes a second switching devices made of a wide-bandgap semiconductor and a freewheeling diode connected in anti-parallel to the second switching device.Type: ApplicationFiled: January 5, 2018Publication date: August 16, 2018Applicant: Fuji Electric Co., Ltd.Inventor: Ryu ARAKI