Abstract: A semiconductor apparatus includes: a power semiconductor element; a control chip including a plurality of terminals including a first terminal and a second terminal, and being configured to control the power semiconductor element using a power supply voltage supplied to the second terminal; a first conductor for supplying a predetermined control voltage to the first terminal; a first line for supplying the power supply voltage to the second terminal; and semiconductor chip including a diode that is used for a bootstrap operation for generating the power supply voltage.

Abstract: A semiconductor module includes a metal plate, a plurality of switching devices joined to one surface of the metal plate, a thermal fuse joined to the surface of the metal plate, and an external terminal electrically connected to the plurality of the switching devices by being joined to the thermal fuse.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.

Abstract: A wiring member is connected to an output electrode of a semiconductor chip and to a wiring region of a main current lead frame via an insulating spacer. In this case, a snubber capacitor is formed by the wiring member and spacer between the input electrode of a (high-side) semiconductor chip and the output electrode of a (low-side) semiconductor chip. This snubber capacitor absorbs back electromotive force produced due to the wiring inductance of the wiring member and main current lead frame.

Abstract: A semiconductor apparatus includes: a power semiconductor element; a control chip including a plurality of terminals including a first terminal and a second terminal, and being configured to control the power semiconductor element using a power supply voltage supplied to the second terminal; a first conductor for supplying a predetermined control voltage to the first terminal; a first line for supplying the power supply voltage to the second terminal; and semiconductor chip including a diode that is used for a bootstrap operation for generating the power supply voltage.

Abstract: A power module, including a high-side switching element and a low-side switching element connected to form a half bridge circuit, a high-side drive circuit which drives the high-side switching element, a low-side drive circuit which drives the low-side switching element, and a high-side current detection circuit which detects a current of the high-side switching element. The high-side drive circuit includes a high-side variable delay circuit which adjusts, according to a value detected by the high-side current detection circuit, a length of a high-side delay time from a time when a signal is inputted to the high-side drive circuit to a time when the high-side switching element is driven.

Abstract: The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method is provided which includes causing one of a first device and a second device of a semiconductor device to perform a switching operation, the semiconductor device comprising the first device and second device connected in series and a third device and a fourth device connected to each other in series and connected parallel to a series circuit of the first device and second device; measuring voltage variation occurring between the third device and the fourth device during the switching operation; and outputting an evaluation benchmark for electromagnetic noise of the semiconductor device, based on the voltage variation.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.

Abstract: A power module, including a high-side switching element and a low-side switching element connected to form a half bridge circuit, a high-side drive circuit which drives the high-side switching element, a low-side drive circuit which drives the low-side switching element, and a high-side current detection circuit which detects a current of the high-side switching element. The high-side drive circuit includes a high-side variable delay circuit which adjusts, according to a value detected by the high-side current detection circuit, a length of a high-side delay time from a time when a signal is inputted to the high-side drive circuit to a time when the high-side switching element is driven.

Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.

Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.

Abstract: A power module including a half bridge circuit having first and second switching elements respectively included in an upper arm and a lower arm thereof, and upper and lower arm drive circuits which respectively drive the first and second switching elements. The power module includes a first ground terminal on a ground side of the second switching element, a second ground terminal connected, via a first ground wiring, to the first ground terminal, a third ground terminal connected, via a second ground wiring including a dumping resistor, to the first ground terminal, a current detection circuit detecting a current flowing through the second switching element, and a control ground switching circuit which performs switching according to a value of the current detected by the current detection circuit, so as to connect a ground terminal of the lower arm drive circuit to the second or third ground terminal.

Abstract: A semiconductor device having a switch circuit and an integrated circuit. The switch circuit includes serially-connected first and second switching devices respectively on a power supply side and a ground side thereof, and first and second free-wheeling diodes connected respectively in parallel with the first and second switching devices. The integrated circuit performs switching of the second switching device, and including a detection circuit that detects a load current flowing through a load of the switch circuit, and a drive circuit that controls magnitude of a current flowing to the gate terminal of the second switching device, to thereby charge a gate capacitance of the second switching device according to a detection result of the detection circuit, when a received drive signal is at one logic level, and turns off the second switching device when the received drive signal is at another logic level.

Abstract: A semiconductor device having a switch circuit and an integrated circuit. The switch circuit includes serially-connected first and second switching devices respectively on a power supply side and a ground side thereof, and first and second free-wheeling diodes connected respectively in parallel with the first and second switching devices. The integrated circuit performs switching of the second switching device, and including a detection circuit that detects a load current flowing through a load of the switch circuit, and a drive circuit that controls magnitude of a current flowing to the gate terminal of the second switching device, to thereby charge a gate capacitance of the second switching device according to a detection result of the detection circuit, when a received drive signal is at one logic level, and turns off the second switching device when the received drive signal is at another logic level.

Abstract: A power module including a half bridge circuit having first and second switching elements respectively included in an upper arm and a lower arm thereof, and upper and lower arm drive circuits which respectively drive the first and second switching elements. The power module includes a first ground terminal on a ground side of the second switching element, a second ground terminal connected, via a first ground wiring, to the first ground terminal, a third ground terminal connected, via a second ground wiring including a dumping resistor, to the first ground terminal, a current detection circuit detecting a current flowing through the second switching element, and a control ground switching circuit which performs switching according to a value of the current detected by the current detection circuit, so as to connect a ground terminal of the lower arm drive circuit to the second or third ground terminal.

Abstract: The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method is provided which includes causing one of a first device and a second device of a semiconductor device to perform a switching operation, the semiconductor device comprising the first device and second device connected in series and a third device and a fourth device connected to each other in series and connected parallel to a series circuit of the first device and second device; measuring voltage variation occurring between the third device and the fourth device during the switching operation; and outputting an evaluation benchmark for electromagnetic noise of the semiconductor device, based on the voltage variation.

Abstract: There is provided a semiconductor device capable of decreasing a switching loss. The semiconductor device has first semiconductor elements (Su)-(Sw) and second semiconductor elements (Sx)-(Sz) connected in series, in which the first semiconductor element includes a low switching loss semiconductor element having a switching loss which is smaller than a switching loss of the second semiconductor element and the second semiconductor element includes a low conduction loss semiconductor element having a conduction loss which is smaller than a conduction loss of the first semiconductor element.