Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: Provided is a semiconductor device having improved breakdown resistance during recovery operation. A semiconductor device according to the present application is a semiconductor device in which an insulated gate bipolar transistor region and a diode region are provided adjacent to each other. The insulated gate bipolar transistor region includes an emitter layer having a short-side direction in a first direction in a plan view. The diode region includes carrier injection suppression layer having a short-side direction in a second direction in a plan view. In a plan view, a width of the carrier injection suppression layer in the second direction is smaller than a width of the emitter layer in the first direction.

Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n?-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n?-type drift layer, a p+-type diffusion layer and an n+-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p?-type anode layer formed on the n?-type drift layer. The p+-type diffusion layer has a higher p-type impurity concentration than the p?-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.

Abstract: An object is to provide a technique capable of improving both recovery loss and recovery capability. The semiconductor device includes a base layer of a second conductive type disposed on a front surface side of the semiconductor substrate in the IGBT region and an anode layer of a second conductive type disposed on a front surface side of the semiconductor substrate in the diode region. The anode layer includes a first portion having a lower end located at a same position as a lower end of the base layer or having a lower end located above the lower end of the base layer and a second portion adjacent to the first portion in plan view, and whose lower end is located above the lower end of the first portion.

Abstract: Provided is a semiconductor device having improved breakdown resistance during recovery operation. A semiconductor device according to the present application is a semiconductor device in which an insulated gate bipolar transistor region and a diode region are provided adjacent to each other. The insulated gate bipolar transistor region includes an emitter layer having a short-side direction in a first direction in a plan view. The diode region includes carrier injection suppression layer having a short-side direction in a second direction in a plan view. In a plan view, a width of the carrier injection suppression layer in the second direction is smaller than a width of the emitter layer in the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, and the semiconductor substrate is divided into an IGBT region, a diode region, and a MOSFET region. A drift layer of n?-type is provided in the semiconductor substrate. The drift layer is shared among the IGBT region, the diode region, and the MOSFET region. In the semiconductor substrate, the diode region is always disposed between the IGBT region and the MOSFET region to cause the IGBT region and the MOSFET region to be separated from each other without being adjacent to each other.

Abstract: A semiconductor device includes an IGBT region extending from a front surface to a rear surface of a semiconductor substrate including a first conductive type drift layer, and a diode region lying adjacent to the IGBT region. The IGBT region includes a second conductive type base layer on a side facing the front surface and a first trench portion penetrating the base layer. The first trench portion includes a first gate electrode, a second gate electrode provided directly below the first gate electrode, and an insulating film provided on a side surface of the first gate electrode, between the first gate electrode and the second gate electrode and in a position to contact the second gate electrode. The diode region includes a second conductive type anode layer and a second trench portion including a dummy gate electrode on the side facing the front surface.

Abstract: An object is to provide a technique capable of improving both recovery loss and recovery capability. The semiconductor device includes a base layer of a second conductive type disposed on a front surface side of the semiconductor substrate in the IGBT region and an anode layer of a second conductive type disposed on a front surface side of the semiconductor substrate in the diode region. The anode layer includes a first portion having a lower end located at a same position as a lower end of the base layer or having a lower end located above the lower end of the base layer and a second portion adjacent to the first portion in plan view, and whose lower end is located above the lower end of the first portion.

Abstract: An RC-IGBT includes a first electrode disposed on a first main surface of a semiconductor substrate over a transistor region and a diode region. The semiconductor substrate includes a MOS gate structure on a first main surface side in the transistor region. The RC-IGBT includes: an interlayer dielectric covering a gate electrode of the MOS gate structure, and having a contact hole exposing a semiconductor layer; and a barrier metal disposed in the contact hole. The first electrode enters the contact hole, is in contact with the semiconductor layer of the MOS gate structure through the barrier metal, and is in direct contact with a semiconductor layer in the diode region of the semiconductor substrate.

Abstract: A switching element control device for controlling a switching element incorporating a reverse conducting diode is provided. The switching element control device includes: a voltage detection circuit detecting a voltage across first and second main electrodes of the switching element; a comparator circuit comparing the voltage detected by the voltage detection circuit with a threshold voltage; and a drive circuit controlling driving of the switching element. The comparator circuit controls the drive circuit so that an on signal is not provided to the switching element when the detected voltage exceeds the threshold voltage.

Abstract: A semiconductor device includes a semiconductor substrate, and the semiconductor substrate is divided into an IGBT region, a diode region, and a MOSFET region. A drift layer of n?-type is provided in the semiconductor substrate. The drift layer is shared among the IGBT region, the diode region, and the MOSFET region. In the semiconductor substrate, the diode region is always disposed between the IGBT region and the MOSFET region to cause the IGBT region and the MOSFET region to be separated from each other without being adjacent to each other.

Abstract: A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n?-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n?-type drift layer, a p+-type diffusion layer and an n+-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p?-type anode layer formed on the n?-type drift layer. The p+-type diffusion layer has a higher p-type impurity concentration than the p?-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.

Abstract: A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n?-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n?-type drift layer, a p+-type diffusion layer and an n+-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p?-type anode layer formed on the n?-type drift layer. The p+-type diffusion layer has a higher p-type impurity concentration than the p?-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.

Abstract: A switching element control device for controlling a switching element incorporating a reverse conducting diode is provided. The switching element control device includes: a voltage detection circuit detecting a voltage across first and second main electrodes of the switching element; a comparator circuit comparing the voltage detected by the voltage detection circuit with a threshold voltage; and a drive circuit controlling driving of the switching element. The comparator circuit controls the drive circuit so that an on signal is not provided to the switching element when the detected voltage exceeds the threshold voltage.

Abstract: An RC-IGBT includes a first electrode disposed on a first main surface of a semiconductor substrate over a transistor region and a diode region. The semiconductor substrate includes a MOS gate structure on a first main surface side in the transistor region. The RC-IGBT includes: an interlayer dielectric covering a gate electrode of the MOS gate structure, and having a contact hole exposing a semiconductor layer; and a barrier metal disposed in the contact hole. The first electrode enters the contact hole, is in contact with the semiconductor layer of the MOS gate structure through the barrier metal, and is in direct contact with a semiconductor layer in the diode region of the semiconductor substrate.

Abstract: A semiconductor device includes an IGBT region extending from a front surface to a rear surface of a semiconductor substrate including a first conductive type drift layer, and a diode region lying adjacent to the IGBT region. The IGBT region includes a second conductive type base layer on a side facing the front surface and a first trench portion penetrating the base layer. The first trench portion includes a first gate electrode, a second gate electrode provided directly below the first gate electrode, and an insulating film provided on a side surface a the first gate electrode, between the first gate electrode and the second gate electrode and in a position to contacts the second gate electrode. The diode region includes a second conductive type anode layer and a second trench portion including a dummy gate electrode on the side facing the front surface.

Abstract: An RC-IGBT includes a first electrode disposed on a first main surface of a semiconductor substrate over a transistor region and a diode region. The semiconductor substrate includes a MOS gate structure on a first main surface side in the transistor region. The RC-IGBT includes: an interlayer dielectric covering a gate electrode of the MOS gate structure, and having a contact hole exposing a semiconductor layer; and a barrier metal disposed in the contact hole. The first electrode enters the contact hole, is in contact with the semiconductor layer of the MOS gate structure through the barrier metal, and is in direct contact with a semiconductor layer in the diode region of the semiconductor substrate.