Patents by Inventor Ryu Saito

Ryu Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240047074
    Abstract: An information processing device is provided. This information processing device has a read-out unit, a calculation unit, and an output unit. The read-out unit reads a first electrocardiogram waveform of a first subject. The calculation unit calculates an index that depends on the expected value of heart failure severity on the basis of the first electrocardiogram waveform and reference information. The reference information shows the correlation between the index and a second electrocardiogram waveform of a second subject that is different from the first subject. The output unit outputs the index.
    Type: Application
    Filed: October 11, 2022
    Publication date: February 8, 2024
    Inventors: Katsuhito FUJIU, Yu SHIMIZU, Issei KOMURO, Eriko HASUMI, Ying CHEN, Ryu SAITO, Minoru SHIRATSUCHI
  • Patent number: 11412978
    Abstract: An information processing system is provided to reduce labor of medical staff in determining heart failure stage. The information processing system is configured to execute: a reading step of reading out an input first electrocardiogram including an electrocardiogram of a user; and a determination step of determining a heart failure stage of the user based on the first electrocardiogram and reference information, wherein the reference information is information showing a relationship between the second electrocardiogram, including the electrocardiogram obtained beforehand, in which the heart failure stage has been determined by the physician, and a feature quantity of the heart failure, wherein: the reference information is a learned model in which the feature quantity of the heart failure is learned from the second electrocardiogram, and the learned model is a model that learned a content determined in the determination step and corresponding clinical data.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: August 16, 2022
    Inventors: Katsuhito Fujiu, Issei Komuro, Eriko Hasumi, Yu Shimizu, Yoshihiro Mikami, Ryu Saito, Minoru Shiratsuchi, Ying Chen, Yuji Hamada
  • Publication number: 20220061754
    Abstract: An information processing system is provided to reduce labor of medical staff in determining heart failure stage. The information processing system is configured to execute: a reading step of reading out an input first electrocardiogram including an electrocardiogram of a user; and a determination step of determining a heart failure stage of the user based on the first electrocardiogram and reference information, wherein the reference information is information showing a relationship between the second electrocardiogram, including the electrocardiogram obtained beforehand, in which the heart failure stage has been determined by the physician, and a feature quantity of the heart failure, wherein: the reference information is a learned model in which the feature quantity of the heart failure is learned from the second electrocardiogram, and the learned model is a model that learned a content determined in the determination step and corresponding clinical data.
    Type: Application
    Filed: June 21, 2021
    Publication date: March 3, 2022
    Applicants: THE UNIVERSITY OF TOKYO, SIMPLEX QUANTUM Inc., SIMPLEX QUANTUM Inc.
    Inventors: Katsuhito FUJIU, Issei KOMURO, Eriko HASUMI, Yu SHIMIZU, Yoshihiro MIKAMI, Ryu SAITO, Minoru SHIRATSUCHI, Ying CHEN, Yuji HAMADA
  • Patent number: 5894139
    Abstract: A semiconductor device is provided which includes a first-conductivity-type collector layer having a rear surface on which a collector electrode is formed, a second-conductivity-type buffer layer laminated on the collector layer, a second-conductivity-type conductivity modulation layer formed on the buffer layer, a first-conductivity-type emitter layer formed as a well in a surface of the conductivity modulation layer, a second-conductivity-type source region formed in a surface of a well edge portion of the emitter layer, a gate electrode formed through a gate insulating film to overlap the source region and the conductivity modulation layer, and an emitter electrode that is in ohmic contact with both the emitter layer and the source region.
    Type: Grant
    Filed: May 28, 1997
    Date of Patent: April 13, 1999
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Masahito Otsuki, Ryu Saito, Yasuhiko Onishi
  • Patent number: 5475243
    Abstract: An insulated-gate bipolar transistor (IGBT) is connected in reverse-parallel with a current-regenerative diode which, for economy of manufacture, is integrated with the IGBT. Such a diode may extend laterally on an IGBT chip, with two conductivity regions forming the diode respectively connected to emitter and collector electrodes of the IGBT. Alternatively, the diode may be formed by short-circuiting a buffer layer and a collector layer. By such integration, greater device packing density can be realized.
    Type: Grant
    Filed: February 22, 1994
    Date of Patent: December 12, 1995
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Ryu Saito