Patents by Inventor Ryu TAKASHIMA

Ryu TAKASHIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220367568
    Abstract: A memory device includes a memory cell and a first select transistor. The memory cell includes a variable resistance memory region, a first semiconductor layer being in contact with the variable resistance memory region, a first insulating layer being in contact with the first semiconductor layer, and a first voltage application electrode being in contact with the first insulating layer. The first select transistor includes a second semiconductor layer, a second insulating layer being in contact with the second semiconductor layer, and a second voltage application electrode extending in the second direction and being in contact with the second insulating layer.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Applicant: Kioxia Corporation
    Inventors: Ryu OGIWARA, Daisaburo TAKASHIMA, Takahiko IIZUKA
  • Publication number: 20220241754
    Abstract: The invention provides a method of producing a metal oxyhydride, capable of synthesizing the metal oxyhydride under reaction conditions close to atmospheric pressure, and excellent in productivity and cost. The method of producing a metal oxyhydride of the present invention includes reacting an oxide with a metal hydride in a hydrogen atmosphere. A non-oxygen element constituting the oxide comprises only one kind of non-oxygen element. A pressure condition of the reaction is 0.1 to 0.9 MPa, and a temperature of the reaction is 500 to 1000° C.
    Type: Application
    Filed: July 1, 2020
    Publication date: August 4, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Masaaki KITANO, Hideo HOSONO, Toshiharu YOKOYAMA, Kayato OOYA, Kiya OGASAWARA, Ryu TAKASHIMA