Abstract: A method of processing a wafer having devices disposed in respective regions demarcated on a front face thereof by a grid of a plurality of projected dicing lines on the front face, the method includes a mask layer forming step of covering the front face of the wafer except for the regions where grooves are to be formed along the projected dicing lines with a resin material mixed with an ultraviolet ray absorber, and forming a mask layer on the front face of the wafer, a plasma etching step of performing plasma etching on the wafer from the mask layer side using a fluorine-based stable gas as an etching gas, and forming grooves in the wafer along the projected dicing lines, and a mask layer removing step of removing the mask layer after the plasma etching step is performed.

Abstract: A method of processing a wafer having devices disposed in respective regions demarcated on a front face thereof by a grid of a plurality of projected dicing lines on the front face, the method includes a mask layer forming step of covering the front face of the wafer except for the regions where grooves are to be formed along the projected dicing lines with a resin material mixed with an ultraviolet ray absorber, and forming a mask layer on the front face of the wafer, a plasma etching step of performing plasma etching on the wafer from the mask layer side using a fluorine-based stable gas as an etching gas, and forming grooves in the wafer along the projected dicing lines, and a mask layer removing step of removing the mask layer after the plasma etching step is performed.

Abstract: An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.

Abstract: A laser beam irradiation unit of a laser processing apparatus includes a pulse laser oscillator, a condenser which converges and irradiates a pulse laser beam upon a workpiece held on a chuck table, a dichroic mirror disposed between the pulse laser oscillator and the condenser, a strobo flash irradiation unit which irradiates light on a route of the dichroic mirror and the condenser, a beam splitter disposed between the strobo flash irradiation unit and the dichroic mirror, and an image pickup unit disposed on the route of the light split by the beam splitter. A control unit renders the strobo flash irradiation unit and the image pickup unit operative in a timed relationship with the pulse laser beam oscillated from the pulse laser beam oscillator and irradiated upon the workpiece and detects a processed state on the basis of an image signal from the image pickup unit.

Abstract: An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.

Abstract: A laser beam irradiation unit of a laser processing apparatus includes a pulse laser oscillator, a condenser which converges and irradiates a pulse laser beam upon a workpiece held on a chuck table, a dichroic mirror disposed between the pulse laser oscillator and the condenser, a strobo flash irradiation unit which irradiates light on a route of the dichroic mirror and the condenser, a beam splitter disposed between the strobo flash irradiation unit and the dichroic mirror, and an image pickup unit disposed on the route of the light split by the beam splitter. A control unit renders the strobo flash irradiation unit and the image pickup unit operative in a timed relationship with the pulse laser beam oscillated from the pulse laser beam oscillator and irradiated upon the workpiece and detects a processed state on the basis of an image signal from the image pickup unit.

Abstract: A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table, a processing-feed means, an indexing-feed means, a processing-feed amount detection means for detecting the amount of feed, an indexing-feed amount detection means, and a control means, wherein the condenser constituting the laser beam application means comprises an elliptic spot forming means for forming a focal spot into an elliptic shape and a focal spot turning means for turning the elliptic focal spot on an optical axis at the center thereof; and the control means comprises a storage means for storing the X, Y coordinate values of a processing line formed on the workpiece, obtains the X, Y coordinate values of the current position of a laser beam application position based on detection signals from the processing-feed amount detection means and the indexing-feed amount detection means, and controls the focal spot turning means to ensure that the long axis of the focal

Abstract: A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens dispose

Abstract: An optical device obtained by bonding a first transparent member having a birefringent property to a second transparent member having a birefringent property. A dielectric multilayer film having no influence on the transmittance of light is formed on at least one of the bonding surfaces of the first and second transparent members. The bonding surface of the first transparent member is bonded through the dielectric multilayer film to the bonding surface of the second transparent member by optical contact.

Abstract: A laser processing beam machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the laser beam application means comprises a laser beam oscillation means for oscillating a laser beam and a condenser for converging the laser beam oscillated by the laser beam oscillation means; and the condenser comprises a condenser lens opposed to the workpiece held on the chuck table, a cylindrical lens arranged on the upstream side in the laser beam application direction of the condenser lens, and an interval adjustment mechanism for adjusting the interval between the condenser lens and the cylindrical lens.

Abstract: A wafer dividing method for dividing a wafer having a film on the front side thereof.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid

Abstract: A laser processing machine is provided in which a flat plate-like mask is disposed between a mirror and a relay lens in an optical system so as to be perpendicular to the optical path of a laser beam. The mask is horizontally shiftable. The laser beam is allowed to pass through an elongate trapezoidal aperture formed in the mask to extend in the shifting direction. The sectional shape of a portion of the laser beam passing through the aperture of the wafer is focused on the wafer. Shifting the mask can adjust the width of an image of the laser beam focused on the wafer.

Abstract: In a wafer processing method for penetrating a wafer by use of a laser processing apparatus including a chuck table for holding the wafer, laser beam irradiation means for irradiating the wafer held on the chuck table with a laser beam, and imaging means for imaging the wafer held on the chuck table, the chuck table includes a chuck table main body, a holding member disposed on an upper surface of the chuck table main body and having a holding surface for holding an entire surface of the wafer, the holding member comprising a transparent or translucent member, and a light emitting body disposed laterally of a side of the holding member opposite to the holding surface.

Abstract: A wafer dividing method for dividing a wafer having a film on the front side thereof.

Abstract: A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid

Abstract: A laser beam processing machine including a chuck table for holding a workpiece, a laser beam application device for applying a laser beam to the workpiece held on the chuck table, and a processing-feed mechanism for moving the chuck table and the laser beam application device relative to each other. The condenser of the laser beam application device includes a first prism for dividing the laser beam oscillated from the laser beam oscillation mechanism into a first laser beam and a second laser beam, and a second prism for correcting optical paths of the first laser beam and the second laser beam so they become parallel to each other. An image forming lens forms respective spots of the first laser beam and the second laser beam whose optical paths have been corrected to be parallel to each other by the second prism, into images of spots having linear portions on the outer sides and arcuate portions on the inner sides.

Abstract: A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens dispose

Abstract: In a wafer processing method for penetrating a wafer by use of a laser processing apparatus including a chuck table for holding the wafer, laser beam irradiation means for irradiating the wafer held on the chuck table with a laser beam, and imaging means for imaging the wafer held on the chuck table, the chuck table includes a chuck table main body, a holding member disposed on an upper surface of the chuck table main body and having a holding surface for holding an entire surface of the wafer, the holding member comprising a transparent or translucent member, and a light emitting body disposed laterally of a side of the holding member opposite to the holding surface.