Patents by Inventor Ryuichi Funatsu
Ryuichi Funatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8193493Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: GrantFiled: February 22, 2011Date of Patent: June 5, 2012Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
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Publication number: 20110139985Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: ApplicationFiled: February 22, 2011Publication date: June 16, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Sayaka TANIMOTO, Hiroya OHTA, Hiroshi MAKINO, Ryuichi FUNATSU
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Patent number: 7906761Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: GrantFiled: February 26, 2008Date of Patent: March 15, 2011Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
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Patent number: 7880143Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.Type: GrantFiled: December 18, 2007Date of Patent: February 1, 2011Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
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Patent number: 7855363Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: GrantFiled: August 12, 2008Date of Patent: December 21, 2010Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Publication number: 20100133433Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.Type: ApplicationFiled: December 18, 2007Publication date: June 3, 2010Inventors: Sayaka TANIMOTO, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
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Publication number: 20090309022Abstract: An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection.Type: ApplicationFiled: June 8, 2009Publication date: December 17, 2009Inventors: Yasuhiro GUNJI, Akira Fujii, Hiroyuki Takahashi, Ryuichi Funatsu, Toshifumi Honda, Takashi Hiroi, Hiroshi Makino
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Publication number: 20090045338Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: ApplicationFiled: August 12, 2008Publication date: February 19, 2009Inventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Publication number: 20080230697Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: ApplicationFiled: February 26, 2008Publication date: September 25, 2008Inventors: Sayaka TANIMOTO, Hiroya OHTA, Hiroshi MAKINO, Ryuichi FUNATSU
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Patent number: 7425704Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: GrantFiled: February 15, 2006Date of Patent: September 16, 2008Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Patent number: 7271385Abstract: An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.Type: GrantFiled: September 26, 2005Date of Patent: September 18, 2007Assignee: Hitachi High-Technologies CorporationInventors: Yasuhiro Gunji, Taku Ninomiya, Ryuichi Funatsu, Yoshikazu Inada, Kenjirou Yamamoto, Mari Nozoe
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Publication number: 20060192117Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: ApplicationFiled: February 15, 2006Publication date: August 31, 2006Inventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Patent number: 7081625Abstract: The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.Type: GrantFiled: November 5, 2003Date of Patent: July 25, 2006Assignees: Hitachi High-Technologies Corporation, Hitachi Science Systems, Ltd.Inventors: Masanari Furiki, Kouichi Kurosawa, Takehiko Konno, Ryuichi Funatsu
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Patent number: 7071468Abstract: A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.Type: GrantFiled: October 5, 2004Date of Patent: July 4, 2006Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Patent number: 7034298Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: GrantFiled: September 25, 2003Date of Patent: April 25, 2006Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Publication number: 20060076490Abstract: An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.Type: ApplicationFiled: September 26, 2005Publication date: April 13, 2006Inventors: Yasuhiro Gunji, Taku Ninomiya, Ryuichi Funatsu, Yoshikazu Inada, Kenjirou Yamamoto, Mari Nozoe
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Publication number: 20050194536Abstract: The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.Type: ApplicationFiled: April 12, 2005Publication date: September 8, 2005Inventors: Masanari Furiki, Kouichi Kurosawa, Takehiko Konno, Ryuichi Funatsu
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Publication number: 20050109938Abstract: A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.Type: ApplicationFiled: October 5, 2004Publication date: May 26, 2005Inventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Publication number: 20050040331Abstract: An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.Type: ApplicationFiled: September 17, 2004Publication date: February 24, 2005Inventors: Yasuhiro Gunji, Taku Ninomiya, Ryuichi Funatsu, Yoshikazu Inada, Kenjirou Yamamoto, Mari Nozoe
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Publication number: 20040188609Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: ApplicationFiled: September 25, 2003Publication date: September 30, 2004Inventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara