Abstract: It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the subtrate.

Abstract: It is to provide a substrate for epitaxial growth, which is capable of improving a surface state of an epitaxial layer at microroughness level. In a substrate for epitaxial growth, when haze is defined as a value calculated by dividing intensity of scattered light obtained when light is incident from a predetermined light source onto a surface of a substrate, by intensity of the incident light from the light source, the haze is not more than 2 ppm all over an effectively used area of the substrate and an off-angle with respect to a plane direction is 0.05 to 0.10°.

Abstract: It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015cm?3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015cm?3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 ?cm.

Abstract: A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25° C./cm or less and setting a temperature-fall amount to 0.25° C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cm2 or less occupies 70% or more is realized.

Abstract: It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the substrate.

Abstract: An image pickup apparatus has an image sensor recording image information; a dustproof glass for keeping hermeticity of the periphery of the image sensor, placed in front of the image sensor; an optical filter removably placed in front of the dustproof glass; and a camera mount placed in front of the optical filter. The image pickup apparatus further has a parfocal adjusting device in which a focal position where the optical filter is demounted can be adjusted so as to be nearly equal to the focal position where the optical filter is mounted.

Abstract: The present invention relates to a wafer storage container which contains a semiconductor wafer one by one and provides a technology to effectively reduce adhesion of particles on semiconductor wafer surfaces during the storage of the wafer. A wafer storage container which contains a wafer one by one, includes: a wafer containing member including a domed-shape recess which abuts on a circumferential edge of the wafer and is capable of holding the wafer; and a cover member which is engaged with the wafer containing member and is capable of sealing the wafer containing member; and a wafer rear surface protection member which is formed into a shape substantially same as an opening of the domed-shape recess and comes into contact with an entire rear surface of the wafer placed so that a front surface is directed the domed-shape recess.

Abstract: It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

Abstract: A microscope system having a selectively mountable optical element, comprises: a first noncontact type storage medium, being equipped in the optical element, for enabling a noncontact readout of information externally; and a first readout unit for reading information non-contactingly from the first noncontact type storage medium, wherein the first noncontact type storage medium stores information related to the optical element.

Abstract: A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109 ?·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.

Abstract: A tissue culture microscope apparatus includes a culture unit that includes a chamber in which a specimen is put, and maintains the chamber at a predetermined temperature to culture the specimen; an observation unit that forms an observation image of the specimen put in the chamber; and a liquid supply unit that stores a liquid in a protrusion portion penetrating into a wall of the chamber and protruding to an inside of the chamber, matches a temperature of the liquid with the temperature of the chamber, and injects the liquid from the protrusion portion to the specimen.

Abstract: An imaging apparatus comprises an imaging device which images an image, an exterior member which contains the imaging device, an interior member which is arranged inside of the exterior member and contains the imaging device, a heat insulator arranged between the exterior member and the interior member, for thermally insulating between the exterior member and the interior member, and a cooling unit configured to cool the imaging device and the interior member respectively and radiating heat that is absorbed from the imaging device and the interior member to the exterior member independently.

Abstract: A culture observation apparatus, which is used for observing a cultured cell while culturing the cell, includes a culture device that cultures the cultured cell, and a microscope used for observing the cultured cell. The culture device includes a first space that is controlled to an environment suitable for culture of the cell, and a second space that is controlled to a lower humidity condition in comparison with the first space. The microscope includes an objective optical unit including an objective lens; the objective optical unit having at least one portion located in the second space, and another portion extending into the first space through an opening formed in a partition wall that separates the first space and the second space, with a gap between the objective optical unit and the partition wall being sealed by a sealing member, and the objective lens includes a plurality of lens groups, with mutual spaces among the lens groups vented to the second space.

Abstract: A culture observation apparatus, which is used for observing a cultured cell while culturing the cell, includes a culture device that forms a culture space which is controlled to be an environment suitable for culturing the cultured cell; a sample tray that holds a container housing the cultured cell and a culture medium; a microscope that serves for observing the cultured cell; a tray holding mechanism that holds the sample tray in the culture space in a detachable manner with good reproducibility; and a shifting mechanism that relatively shifts the sample tray held by the tray holding mechanism and a light axis of the microscope along a plane that is orthogonal to the light axis, wherein the sample tray has a heater used for heating the sample tray, and is electrically connectable to an energy supplying unit that supplies energy to the sample tray.

Abstract: An observation apparatus includes a sample tray that holds a container housing a cultured cell and a culture medium and covered with a lid; an observation unit that serves for observation of the cultured cell; and a shifting unit that relatively shifts the sample tray and a light axis of the observation unit along a plane that is orthogonal to the light axis of the observation unit, wherein the sample tray includes a container holding unit that holds the container by utilizing an elastic force, and at least one of the lid and one portion of the lid is made detachable, with the container being held in the sample tray by the container holding unit.

Abstract: In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 ?m or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.

Abstract: A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109 ?·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.

Abstract: An imaging apparatus comprises an imaging device which images an image, an exterior member which contains the imaging device, an interior member which is arranged inside of the exterior member and contains the imaging device, a heat insulator arranged between the exterior member and the interior member, for thermally insulating between the exterior member and the interior member, and a cooling unit configured to cool the imaging device and the interior member respectively and radiating heat that is absorbed from the imaging device and the interior member to the exterior member independently.

Abstract: In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 &mgr;m or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.

Abstract: A crystal growth apparatus comprising a heating furnace capable of controlling uniformly the temperature distribution in the same horizontal plane, and a method for producing a single crystal by using the crystal growth apparatus are provided. In the crystal growth apparatus comprising a cylindrical heating furnace (110) having plural heaters (101, 102, 103 and 104) laminated in multi-stage in an axial direction (Z), each heater is disposed for the terminal portions of the adjacent heaters not to be overlapped in the same position, but to be in a mutually separated position, seeing from the axial direction of the heating furnace. Concretely, in case of N (n is a positive integer of three or more) heaters, each heater (101, 102, 103 and 104) is disposed for the terminal portions (110a, 102a, 103a and 104a) of the heaters to be located at each apex of a regular n-gon (n is an integer satisfying 3≦n≦N), seeing from the axial direction Z of the heating furnace.