Abstract: A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from the semiconductor device than the first side. The coefficient of thermal expansion of the second layer is lower than the coefficient of thermal expansion of the first layer.

Abstract: A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from the semiconductor device than the first side. The coefficient of thermal expansion of the second layer is lower than the coefficient of thermal expansion of the first layer.

Abstract: A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.

Abstract: A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.

Abstract: A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.

Abstract: A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.

Abstract: A flexible material processing rotation tool that executes processing against a target material composed of flexible material, and which is characterized by forming or more cutting blade protrusions on the surface of the substrate so that they project upward, formation of an inclined surface on the surface of cutting blade protrusion and formation of cutting blade ridge at the section that projects most upward from among the ridge areas of inclined surface, and by arrangement so that a portion of the inclined surfaces of cutting blade protrusions facing at least in one direction of the circumferential direction of the rotation of the substrate, and arrangement of at least a portion of the remaining inclined surfaces of cutting blade protrusions in at least the other direction of the circumferential direction of the rotation of the substrate.

Abstract: A cutting tool for machining a soft material is characterized by, on a substrate, a formation of an upward projecting protruding portion having a cutting blade ridge and a formation of an upward projecting pressing portion having a lower height than the protruding portion. The pressing portion adjoins at least the front side of the protruding portion in the rotational direction T (front side in the work material cutting direction). This cutting tool for machining a soft material may improve machining efficiency when conditioning the surface of a pad.

Abstract: Thermal stress caused by a difference in the coefficient of thermal expansion between the mounting substrate and the ceramic substrate acts little on the junction portions of the external connection terminals when a semiconductor device is mounted avoiding such problems that the junction portions are broken or peeled off the mounting substrate.

Abstract: The ceramic composites consisting of sintered alumina comprising a polycrystalline alumina matrix having a grain size of from 0.5 to 10 .mu.m, and fine particles of TiB.sub.2 2 .mu.m or less in diameter being dispersed in the alumina grains, the composite alumina ceramic containing from 15 to 40% by volume of TiB.sub.2 ; or a ceramic composites comprising a polycrystalline alumina matrix as above, fine particles of TiB.sub.2, and fine particles of SiC, the fine particles of TiB.sub.2 and SiC being each 2 .mu.m or less in diameter and being dispersed in the alumina grains, the ceramic composites containing from 5 to 30% by volume of TiB.sub.2 and from 5 to 30% by volume of SiC.

Abstract: A ceramics composites prepared by dispersing any one of the following materials (i) to (viii) in Al.sub.2 O.sub.3 which as a matrix-containing crystalline grains having a grain size of 0.5 to 100 .mu.m. (i) 3 to 40% by volume of fine TiN particles having a particle size of not more than 2 .mu.m and 3 to 40% by volume of fine SiC particles having a particle size of not more than 2 .mu.m. (ii) 3 to 40% by volume of fine TiN particles having a particle size of not more than 2 .mu.m and 3 to 40% by volume of fine Si.sub.3 N.sub.4 particles having a particle size of not more than 2 .mu.m. (iii) 2 to 35% by volume of fine TiC particles having a particle size of not more than 2 .mu.m and 5 to 40% by volume of SiC whiskers having a diameter of 0.05 to 2 .mu.m. (iv) 2 to 35% by volume of fine TiC particles having a particle size of not more than 2 .mu.m and 5 to 40% by volume of Si.sub.3 N.sub.4 whiskers having a diameter of 0.1 to 2 .mu.m.