Abstract: A paste-like adhesive composition of the present invention contains metal particles (A) and a thermally polymerizable compound (B), in which the metal particles (A) form a particle coupling structure by causing sintering through a thermal treatment; when dynamic viscoelasticity of the composition is measured under a condition of a measurement frequency of 1 Hz, within a temperature region of 140° C. to 180° C., the composition has a temperature width of equal to or larger than 10° C. in which a shear modulus of elasticity is equal to or higher than 5,000 Pa and equal to or lower than 100,000 Pa; and an acetone insoluble fraction of a sample, which is obtained by removing the metal particles (A) and then heating the composition under conditions of 180° C. and 2 hours, is equal to or lower than 5% by weight.

Abstract: A paste-like adhesive composition of the present invention contains metal particles (A) and a thermally polymerizable compound (B), in which the metal particles (A) form a particle coupling structure by causing sintering through a thermal treatment; when dynamic viscoelasticity of the composition is measured under a condition of a measurement frequency of 1 Hz, within a temperature region of 140° C. to 180° C., the composition has a temperature width of equal to or larger than 10° C. in which a shear modulus of elasticity is equal to or higher than 5,000 Pa and equal to or lower than 100,000 Pa; and an acetone insoluble fraction of a sample, which is obtained by removing the metal particles (A) and then heating the composition under conditions of 180° C. and 2 hours, is equal to or lower than 5% by weight.

Abstract: A thermally conductive composition of the present invention contains metal particles (A) and a dispersion medium (B) in which the metal particles (A) are dispersed, wherein the metal particles (A) form a particle coupling structure by being sintered through a thermal treatment, the metal particles (A) have a particle size D50 at 50% in a volume-based cumulative distribution of equal to or greater than 0.8 ?m and equal to or smaller than 5 ?m, and the metal particles (A) have a standard deviation of the particle size of equal to or less than 2.0 ?m.

Abstract: According to the present invention, a semiconductor having excellent yield is provided. The semiconductor device (10) of the present invention includes: a base material (die pad) (2), a semiconductor element (3), and an adhesive layer (1) intervening the space between the base material and the semiconductor element (3) to adhere the base material and the semiconductor element. Thermal conductive filler (8) is contained in the adhesive layer (1), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C, the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2 ?m is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2 ?m is expressed as C2, the following formulae are satisfied: C1<C, and C2<C.

Abstract: According to the present invention, a semiconductor having excellent yield is provided. The semiconductor device (10) of the present invention includes: a base material (die pad) (2), a semiconductor element(3), and an adhesive layer(1) intervening the space between the base material and the semiconductor element (3) to adhere the base material and the semiconductor element. Thermal conductive filler (8) is contained in the adhesive layer (1), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C, the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2 ?m is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2 ?m is expressed as C2, the following formulae are satisfied: C1<C, and C2<C.

Abstract: According to the present invention, a resin composition having superior workability is provided. The paste-like resin composition of the present invention adheres a semiconductor element and a base material, and contains (A) a thermosetting resin and (B) metal particles. d95 in the volume-based particle size distribution of the metal particles as determined with a flow-type particle image analyzer is 10 ?m or less. In other words, the volume ratio of metal particles having a particle diameter that exceeds 10 ?m is less than 5%. Here, d95 indicates the particle diameter at which the cumulative volume ratio thereof is 95%.

Abstract: According to the present invention, a semiconductor device having superior electrical conductivity is provided. The semiconductor device of the present invention is provided with a base material, a semiconductor element, and an adhesive layer that adheres the base material and the semiconductor element while interposed there between. In the adhesive layer of the semiconductor device, a metal particle and an insulating particle are dispersed, and the metal particle has flaked shape or ellipsoidal/spherical shape. As the content percentage by volume of the metal particle in the adhesive layer is a and the content percentage by volume of the insulating particles in the adhesive layer is b, the content percentage (a+b) by volume of fillers in the adhesive layer is 0.20 or more and 0.50 or less and the content percentage a/(a+b) by volume of the metal particles in the fillers is 0.03 or more and 0.70 or less.

Abstract: A resin composition of the present invention includes a maleimide derivative (A) represented by a general formula (1) and a bis-maleimide compound (B) represented by a general formula (2). In the general formula (1), R1 represents a straight chain or branched alkylene group having 1 or more carbon atoms, R2 represents a straight chain or branched alkyl group having 5 or more carbon atoms, and the sum of carbon atoms of R1 and R2 is 10 or less. In the general formula (2), X1 represents —O—, —COO—, or —OCOO—, R3 represents a straight chain or branched alkylene group having 1 to 5 carbon atoms, R4 represents a straight chain or branched alkylene group having 3 to 6 carbon atoms, and m is an integer of 1 or more and 50 or less.

Abstract: According to the invention, a liquid resin composition which has favorable wet spreadability after mounting of a chip and exhibits excellent solder cracking resistance even in a high-temperature solder reflow process at about 260° C., i.e., even when being used in lead-free solder, and a semiconductor package using the liquid resin composition are provided. In the liquid resin composition of the invention, an acrylic copolymer having a radical polymerizable functional group contains alkyl(meth)acrylate as a constituent monomer having a linear or branched alkyl group having 6 to 9 carbon atoms in an amount of 10 wt % to 40 wt % of the entire constituent monomers.

Abstract: The invention provides a resin composition that is excellent in terms of coating workability and can supply reliability, including the soldering reflow resistance, to a semiconductor device when being used as a die attach material or an adhesive for a heat dissipation member. The resin composition of the invention contains a polymer or copolymer of a conjugated diene compound having at least one functional group, a thermosetting resin and a (meth)acryl polymer or copolymer having a reactive functional group that can react with other reactive groups.

Abstract: A resin composition of the present invention includes a maleimide derivative (A) represented by a general formula (1) and a bis-maleimide compound (B) represented by a general formula (2). In the general formula (1), R1 represents a straight chain or branched alkylene group having 1 or more carbon atoms, R2 represents a straight chain or branched alkyl group having 5 or more carbon atoms, and the sum of carbon atoms of R1 and R2 is 10 or less. In the general formula (2), X1 represents —O—, —COO—, or -—OCOO—R3, represents a straight chain or branched alkylene group having 1 to 5 carbon atoms, R4 represents a straight chain or branched alkylene group having 3 to 6 carbon atoms, and m is an integer of 1 or more and 50 or less.

Abstract: According to the invention, a liquid resin composition which has favorable wet spreadability after mounting of a chip and exhibits excellent solder cracking resistance even in a high-temperature solder reflow process at about 260° C., i.e., even when being used in lead-free solder, and a semiconductor package using the liquid resin composition are provided. In the liquid resin composition of the invention, an acrylic copolymer having a radical polymerizable functional group contains alkyl(meth)acrylate as a constituent monomer having a linear or branched alkyl group having 6 to 9 carbon atoms in an amount of 10 wt % to 40 wt % of the entire constituent monomers.

Abstract: The present invention provides a die-attaching paste superior in solder cracking resistance, used for bonding of semiconductor chips. The present invention lies in a die-attaching paste comprising as essential components: (A) a hydrocarbon having a number-average molecular weight of 500 to 5,000 and at least one double bond in the molecule, or its derivative, (B) a reactive diluent, (C) a radical polymerization catalyst, and (D) a filler.

Abstract: The present invention provides a die-attaching paste superior in solder cracking resistance, used for bonding of semiconductor chips.