Patents by Inventor Ryuichi Shimokawa

Ryuichi Shimokawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a solar cell
    Patent number: 6692981
    Abstract: A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.
    Type: Grant
    Filed: September 24, 2001
    Date of Patent: February 17, 2004
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Hidetaka Takato, Ryuichi Shimokawa
  • Photovoltaic device
    Patent number: 6452090
    Abstract: A photovoltaic device includes a semiconductor substrate, an n-type diffusion layer region and a p-type diffusion layer region formed adjacent to each other on the light-receiving surface of the semiconductor substrate, a first electrode electrically connected to the n-type diffusion layer region, a second electrode electrically connected to the p-type diffusion layer region, an adhesive layer formed on the opposite surface of the semiconductor substrate and containing an inorganic binder and a filler, and a supporting substrate adhered to the adhesive layer.
    Type: Grant
    Filed: December 29, 2000
    Date of Patent: September 17, 2002
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Hidetaka Takato, Ryuichi Shimokawa
  • Method of manufacturing a solar cell
    Publication number: 20020036011
    Abstract: A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.
    Type: Application
    Filed: September 24, 2001
    Publication date: March 28, 2002
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Hidetaka Takato, Ryuichi Shimokawa
  • Photovoltaic device
    Publication number: 20010008145
    Abstract: A photovoltaic device includes a semiconductor substrate, an n-type diffusion layer region and a p-type diffusion layer region formed adjacent to each other on the light-receiving surface of the semiconductor substrate, a first electrode electrically connected to the n-type diffusion layer region, a second electrode electrically connected to the p-type diffusion layer region, an adhesive layer formed on the opposite surface of the semiconductor substrate and containing an inorganic binder and a filler, and a supporting substrate adhered to the adhesive layer.
    Type: Application
    Filed: December 29, 2000
    Publication date: July 19, 2001
    Applicant: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Hidetaka Takato, Ryuichi Shimokawa