Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than ?35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

Abstract: An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF4).

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than ?35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

Abstract: An etching method is provided. In the etching method, a silicon oxide film is etched by using plasma in a first condition. In the first condition, a surface temperature of a substrate is controlled to have a temperature lower than ?35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source. Next, the silicon oxide film is etched by using the plasma in a second condition. In the second condition, the output of the second radio frequency power from the second radio frequency power source is stopped. The silicon oxide film is etched by using the plasma alternately in the first condition and in the second condition multiple times.

Abstract: An etching method includes a cooling process of controlling a temperature of a processing target object provided within a processing vessel to ?20° C. or less; a generating process of generating plasma of a processing gas containing hydrogen atoms, fluorine atoms, carbon atoms and oxygen atoms within the processing vessel; and an etching process of etching a region by using the plasma. The processing gas is a mixed gas of a first gas, a second gas and an oxygen atom-containing gas which are different from each other. A mixed gas of the first gas and the second gas contains the hydrogen atoms, the fluorine atoms and the carbon atoms. A ratio between a number of the hydrogen atoms and a number of the fluorine atoms contained in the first gas is different from that in the second gas.

Abstract: An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF4).

Abstract: An etching method is provided. In the etching method, a temperature of a chiller configured to cool a pedestal is controlled so as to become ?20 degrees C. or lower. Plasma is generated from a hydrogen-containing gas and a fluoride-containing gas supplied from a gas supply source by supplying first high frequency power having a first frequency supplied to the pedestal from a first high frequency power source. A silicon oxide film deposited on a substrate placed on the pedestal is etched by the generated plasma. Second high frequency power having a second frequency lower than the first frequency of the first high frequency power is supplied to the pedestal from a second high frequency power source in a static eliminating process after the step of etching the silicon oxide film.

Abstract: An etching method is provided. In the etching method, a silicon oxide film is etched by using plasma in a first condition. In the first condition, a surface temperature of a substrate is controlled to have a temperature lower than ?35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source. Next, the silicon oxide film is etched by using the plasma in a second condition. In the second condition, the output of the second radio frequency power from the second radio frequency power source is stopped. The silicon oxide film is etched by using the plasma alternately in the first condition and in the second condition multiple times.

Abstract: An etching method is provided. In the etching method, a temperature of a chiller configured to cool a pedestal is controlled so as to become ?20 degrees C. or lower. Plasma is generated from a hydrogen-containing gas and a fluoride-containing gas supplied from a gas supply source by supplying first high frequency power having a first frequency supplied to the pedestal from a first high frequency power source. A silicon oxide film deposited on a substrate placed on the pedestal is etched by the generated plasma. Second high frequency power having a second frequency lower than the first frequency of the first high frequency power is supplied to the pedestal from a second high frequency power source in a static eliminating process after the step of etching the silicon oxide film.

Abstract: A metal mask having an etching pattern having a very high verticality is formed, and an etching shape having a very high verticality is formed by etching a semiconductor with the metal mask as a mask. A resist film patterned with a reversal pattern obtained by reversing an etching pattern is formed on a semiconductor (resist film forming process, S100), a metal paste is filled in the reversal pattern of the resist film (metal paste filling process, S200), a metal mask having the etching pattern is formed by removing the resist film while baking the metal paste by a heating control (metal mask forming process, S300), and plasma etching is performed on the semiconductor by using the metal mask (etching process, S400).

Abstract: A plasma etching method is provided for etching a semiconductor substrate with plasma using a metal mask that is patterned on the semiconductor substrate. The plasma etching method includes a first etching step of controlling a pressure within a chamber to a first pressure and etching the semiconductor substrate inside the chamber under the first pressure using a plasma generated from a fluorine-containing gas; and a second etching step to be performed after the first etching step, the second etching step including controlling the pressure within the chamber to a second pressure, which is higher than the first pressure, and etching the semiconductor substrate inside the chamber under the second pressure using the plasma generated from the fluorine-containing gas.

Abstract: A metal mask having an etching pattern having a very high verticality is formed, and an etching shape having a very high verticality is formed by etching a semiconductor with the metal mask as a mask. A resist film patterned with a reversal pattern obtained by reversing an etching pattern is formed on a semiconductor (resist film forming process, S100), a metal paste is filled in the reversal pattern of the resist film (metal paste filling process, S200), a metal mask having the etching pattern is formed by removing the resist film while baking the metal paste by a heating control (metal mask forming process, S300), and plasma etching is performed on the semiconductor by using the metal mask (etching process, S400).