Abstract: A laser welding method according to an embodiment includes a preparation process and a welding process. The preparation process includes preparing a temporarily-welded member that includes multiple connection portions by temporarily welding a second member to a first member. The welding process includes welding the second member to the first member by irradiating a laser beam on the temporarily-welded member. In the welding process, a first process is performed, after which a second process is performed. The first process includes irradiating a laser beam from a prescribed position to a second connection portion, wherein the second connection portion is adjacent to a first connection portion, and the prescribed position is between the first connection portion and the second connection portion. The second process includes irradiating a laser beam from the first connection portion to the prescribed position.

Abstract: A method for detecting a weld state according to an embodiment includes detecting reflected light from a portion on which a laser is irradiated and a light emission of the portion on which the laser is irradiated, and detecting a weld state of the portion on which the laser is irradiated based on the detected reflected light and the detected light emission. The detection of the weld state includes detecting whether or not a signal level of the light emission is not less than a prescribed first threshold and whether or not a signal level of the reflected light is not more than a prescribed second threshold.

Abstract: According to an embodiment, a welding method comprises pretreatment of melting a part of the first member formed by die casting and solidifying the part of the first member. The method may comprise welding the first member and the second member by melting the solidified part of the first member and the second member in contact with each other.

Abstract: According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.

Abstract: According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.

Abstract: The interposer chip includes a chip mounting region on which a semiconductor chip is mounted via a fixing material made of resin. The interposer chip has an insulator film, and wiring layers formed on the insulator film. At a position corresponding to a rim of the chip mounting region, a reinforcing region in which an adhesive force between the insulator film and the wiring layers are increased is provided.

Abstract: In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. Each of band-gap energy of the second insulating film and band-gap energy of the semiconductor layer are smaller than energy of the laser light.

Abstract: In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. The first insulating film is made of silicon nitride. The second insulating film is made of polyimide.

Abstract: According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first and second main surfaces, and a light-emitting layer. The first and second electrode portions are provided on the second main surface of the semiconductor layer. The first insulating film covers the second main surface of the semiconductor layer and the third main surface of the semiconductor layer. The metal layer is stacked on at least the second electrode portion of the first and the second electrode portions, and the metal layer extends until reaching a part of the first insulating film. The part is continuously extended from the first insulating film covering the third main surface.

Abstract: The interposer chip includes a chip mounting region on which a semiconductor chip is mounted via a fixing material made of resin. The interposer chip has an insulator film, and wiring layers formed on the insulator film. At a position corresponding to a rim of the chip mounting region, a reinforcing region in which an adhesive force between the insulator film and the wiring layers are increased is provided.

Abstract: A defective pixel correction apparatus has a laser output section and a measurement mechanism. The laser output section has an adjustment function of adjusting an intensity of a laser beam. The measurement mechanism measures an intensity of a laser beam reflected from a defective pixel.

Abstract: A defective pixel correction apparatus has a laser output section and a measurement mechanism. The laser output section has an adjustment function of adjusting an intensity of a laser beam. The measurement mechanism measures an intensity of a laser beam reflected from a defective pixel.

Abstract: A defective-pixel repairing method is applied to a liquid crystal display. The method applies pulse laser beam to a signal line adjacent to a defective pixel, so as to generate an air bubble. The air bubble is to cover substantially the entirety of the defective pixel and is located at the position corresponding to the defective pixel. The method also applies pulse laser beam to substantially the entirety of the defective pixel where the air bubble is generated, thereby repairing the defective pixel.

Abstract: An defective-pixel repairing method is applicable to a liquid crystal display. A defective pixel of the liquid crystal display is scanned with a pulse laser beam having a repetition frequency of not lower than 1 kHz. The defective pixel is repaired in the state where an air bubble is present at the irradiated position of the pulse laser beam.

Abstract: An outer case has an opening portion and a power generation element is held in the outer case and has a positive electrode and negative electrode with a separator interposed. A cover member is joined to the opening portion and the cover member is welded to the outer case with a laser beam. An injection port is formed in the cover member. After an electrolyte has been injected via the injection port into the outer case, a sealing member is pressed in a hermetical way into the injection port and then blocked by a sealing cover welded to the cover member using the laser beam. Furthermore, a pressing member is provided between the power generation element and the inner surface of the cover member wherein one end of the pressing member is receded a predetermined dimension from the injection port.