Abstract: A semiconductor switching device is disclosed which includes a wafer comprising at least four semiconductive layers with adjacent layers being of opposite conductivity type to form a plurality of P-N junctions. At least part of the P-N junction between one outer layer of the four semiconductive layers and an adjacent layer is shunted by an additional layer formed in the wafer. The additional layer forms an electrical resistance path across the P-N junction, and is prepared by sintering or alloying a metal layer into the wafer material. A method of making the semiconductor switching device is also disclosed.