Abstract: A semiconductor apparatus in a preferred embodiment includes: a substrate; a first chip provided on the substrate; a solder bump formed on the first chip; a solder dam arranged in substantially a rectangular and annular manner outside around the solder bump on the first chip by alternately connecting four sides and four quarter or less arcs; an electrode pad placed outside of the solder dam in the first chip; a second chip provided on the first chip in electric connection to the first chip via the solder bump; and an under-fill material filling a clearance between the first chip and the second chip inside of the solder dam. Here, a difference between an inner diameter and an outer diameter of the arc is 60 ?m or more whereas the center radius of the arc is greater than 207.5 ?m.

Abstract: A semiconductor apparatus in a preferred embodiment includes: a substrate; a first chip provided on the substrate; a solder bump formed on the first chip; a solder dam arranged in substantially a rectangular and annular manner outside around the solder bump on the first chip by alternately connecting four sides and four quarter or less arcs; an electrode pad placed outside of the solder dam in the first chip; a second chip provided on the first chip in electric connection to the first chip via the solder bump; and an under-fill material filling a clearance between the first chip and the second chip inside of the solder dam. Here, a difference between an inner diameter and an outer diameter of the arc is 60 ?m or more whereas the center radius of the arc is greater than 207.5 ?m.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor device includes a substrate having first and second surfaces, the substrate having an opening; a first adhesive layer provided on the first surface; a second adhesive layer provided under the second surface; a third adhesive layer provided around the opening; a semiconductor chip arranging a plurality of chip bonding pads in a central portion of the semiconductor chip and adhered on the third adhesive layer; substrate bonding pads adhered under the second adhesive layer; bonding wires connecting the chip bonding pads to the substrate bonding pads; and an encapsulating resin provided around the semiconductor chip.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor device includes a substrate having first and second surfaces, the substrate having an opening; a first adhesive layer provided on the first surface; a second adhesive layer provided under the second surface; a third adhesive layer provided around the opening; a semiconductor chip arranging a plurality of chip bonding pads in a central portion of the semiconductor chip and adhered on the third adhesive layer; substrate bonding pads adhered under the second adhesive layer; bonding wires connecting the chip bonding pads to the substrate bonding pads; and an encapsulating resin provided around the semiconductor chip.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor laminated module comprises a plurality of unit packages in which semiconductor chips are bonded to base substrates with a first adhesive, a second adhesive to form a laminated body by bonding the plurality of unit packages to each other, a third adhesive formed to cover an upper surface of the semiconductor chips and having substantially the same thermal expansion coefficient as that of the first adhesive, and an uppermost substrate bonded to uppermost one of the unit packages with the second adhesive.

Abstract: A semiconductor laminated module comprises a plurality of unit packages in which semiconductor chips are bonded to base substrates with a first adhesive, a second adhesive to form a laminated body by bonding the plurality of unit packages to each other, a third adhesive formed to cover an upper surface of the semiconductor chips and having substantially the same thermal expansion coefficient as that of the first adhesive, and an uppermost substrate bonded to uppermost one of the unit packages with the second adhesive.

Abstract: A method of manufacturing a semiconductor device wherein, a first lead frame portion has a bed portion for mounting a semiconductor element and a plurality of inner and outer leads. A second lead frame portion has a bed portion for mounting a semiconductor element and a plurality of inner and outer leads as in the first lead frame portion coupled to the second lead frame portion through a coupling portion. The first and second lead frame portions are folded at the coupling portion and superposed such that the two semiconductor elements oppose each other. At this time, the plurality of inner and outer leads of the first and second lead frames are alternately and adjacently arranged. Each electrode of the semiconductor elements is connected to a corresponding inner lead. The superposed first and second lead frames are sealed with a mold resin while leaving end portions of the plurality of outer leads of the first and second lead frames.

Abstract: According to a method of manufacturing a semiconductor device of this invention, a first lead frame portion has a bed portion for mounting a semiconductor element and a plurality of inner and outer leads. A second lead frame portion has a bed portion for mounting a semiconductor element and a plurality of inner and outer leads as in the first lead frame portion coupled to the second lead frame portion through a coupling portion. The first and second lead frame portions are folded at the coupling portion and superposed each other such that the two semiconductor elements oppose each other. At this time, the plurality of inner and outer leads of the first and second lead frames are alternately and adjacently arranged. Each electrode of the semiconductor elements is connected to a corresponding inner lead. The superposed first and second lead frames are sealed with a mold resin while leaving end portions of the plurality of outer leads of the first and second lead frames.