Patents by Inventor Ryuji Kondo
Ryuji Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11932820Abstract: A method for producing a lubricating oil composition of the present embodiment includes an irradiation step of irradiating a fullerene solution in which fullerenes are dissolved in a base oil with radiation, in which the above-described radiation is ultraviolet light or ionizing radiation.Type: GrantFiled: April 23, 2020Date of Patent: March 19, 2024Assignees: Resonac Corporation, MITSUBISHI CORPORATIONInventors: Ryuji Monden, Kunio Kondo
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Patent number: 7230224Abstract: A solid state image pickup device having: a semiconductor substrate having a light receiving area; a number of pixels formed in the light receiving area of the semiconductor substrate in a matrix shape, each of the pixels having a main photosensitive field having a relatively large area and a subsidiary photosensitive field having a relatively small area; a main color filter array formed above the semiconductor substrate and covering at least the main photosensitive fields in register with the respective pixels; and a micro lens array formed on the color filter array and covering at least the main photosensitive fields in register with the respective pixels, wherein an image signal can be selectively picked up from either one of the main and subsidiary photosensitive fields. A solid state image pickup device having a high resolution can be provided.Type: GrantFiled: January 23, 2003Date of Patent: June 12, 2007Assignee: Fuji Photo Film Co., Ltd.Inventors: Ryuji Kondo, Tetsuo Yamada
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Patent number: 7110031Abstract: A color shooting solid state image pickup apparatus is composed by using a solid state image pickup device having a number of color pixels disposed in a plurality of rows and columns in a pixel shift layout with distributing at least one color-type color pixels in a square lattice pattern aligned in row and column directions and by using a video signal proceeding unit being able to perform interpolation processes using color information obtained from pixel signals output from the solid state image pickup device excepting one piece of color information obtained from pixel signals of the color pixels distributed in a square lattice pattern. A moving image having a smooth motion can be reproduced on a monitor even if the process performance of the video signal proceeding unit is not improved so much.Type: GrantFiled: December 20, 2001Date of Patent: September 19, 2006Assignee: Fuji Photo Film Co., Ltd.Inventors: Ryuji Kondo, Tetsuo Yamada
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Patent number: 7064405Abstract: A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.Type: GrantFiled: April 14, 2004Date of Patent: June 20, 2006Assignee: Fuji Photo Film Co., Ltd.Inventors: Ryuji Kondo, Shinji Uya, Yuko Nomura
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Publication number: 20050045975Abstract: A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.Type: ApplicationFiled: April 14, 2004Publication date: March 3, 2005Inventors: Ryuji Kondo, Shinji Uya, Yuko Nomura
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Publication number: 20030141564Abstract: A solid state image pickup device having: a semiconductor substrate having a light receiving area; a number of pixels formed in the light receiving area of the semiconductor substrate in a matrix shape, each of the pixels having a main photosensitive field having a relatively large area and a subsidiary photosensitive field having a relatively small area; a main color filter array formed above the semiconductor substrate and covering at least the main photosensitive fields in register with the respective pixels; and a micro lens array formed on the color filter array and covering at least the main photosensitive fields in register with the respective pixels, wherein an image signal can be selectively picked up from either one of the main and subsidiary photosensitive fields. A solid state image pickup device having a high resolution can be provided.Type: ApplicationFiled: January 23, 2003Publication date: July 31, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Ryuji Kondo, Tetsuo Yamada
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Publication number: 20020085103Abstract: A color shooting solid state image pickup apparatus is composed by using a solid state image pickup device having a number of color pixels disposed in a plurality of rows and columns in a pixel shift layout with distributing at least one color-type color pixels in a square lattice pattern aligned in row and column directions and by using a video signal proceeding unit being able to perform interpolation processes using color information obtained from pixel signals output from the solid state image pickup device excepting one piece of color information obtained from pixel signals of the color pixels distributed in a square lattice pattern. A moving image having a smooth motion can be reproduced on a monitor even if the process performance of the video signal proceeding unit is not improved so much.Type: ApplicationFiled: December 20, 2001Publication date: July 4, 2002Applicant: Fuji Photo Film Co., Ltd.Inventors: Ryuji Kondo, Tetsuo Yamada
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Patent number: 6414343Abstract: A solid-state imaging device comprises: a semiconductor substrate which demarcates a two-dimensional surface; a multiplicity of photoelectric conversion units configured in a multiplicity of rows and columns on the surface of said semiconductor substrate; a light shielding film having openings formed above said semiconductor substrate, each of the openings is formed on each of said photoelectric conversion unit; a planarizing insulating film formed on said light shielding film; micro lenses formed on said planarizing insulating film, each micro lens is formed just above each of said opening; and a modifying film having one layer or a plurality of layers formed directly on said micro lenses and having a top surface with different curvature from that of a top surface of the micro lenses.Type: GrantFiled: October 2, 2000Date of Patent: July 2, 2002Assignee: Fuji Photo Film., Ltd.Inventors: Ryuji Kondo, Kazuyuki Masukane
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Patent number: 5519244Abstract: The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.Type: GrantFiled: July 6, 1994Date of Patent: May 21, 1996Assignee: Hitachi, Ltd.Inventors: Yuji Yatsuda, Takaaki Hagiwara, Ryuji Kondo, Shinichi Minami, Yokichi Itoh
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Patent number: 5348898Abstract: The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.Type: GrantFiled: January 26, 1993Date of Patent: September 20, 1994Assignee: Hitachi, Ltd.Inventors: Yuji Yatsuda, Takaaki Hagiwara, Ryuji Kondo, Shinichi Minami, Yokichi Itoh
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Patent number: 5264393Abstract: A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results. Further, a method of manufacturing the solid sate image pick-up device of the present invention is provided.Type: GrantFiled: February 27, 1992Date of Patent: November 23, 1993Assignee: Fuji Photo Film Co., Ltd.Inventors: Hiroshi Tamura, Ryuji Kondo, Jin Murayama, Hideki Kosaka, Noboru Maruyama, Toshihiko Komatsu
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Patent number: 5252505Abstract: The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.Type: GrantFiled: January 15, 1992Date of Patent: October 12, 1993Assignee: Hitachi, Ltd.Inventors: Yuji Yatsuda, Takaaki Hagiwara, Ryuji Kondo, Shinichi Minami, Yokichi Itoh
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Patent number: 5122861Abstract: A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results. Further, a method of manufacturing the solid state image pick-up device of the present invention is provided.Type: GrantFiled: August 31, 1990Date of Patent: June 16, 1992Assignee: Fuji Photo Film Co., Ltd.Inventors: Hiroshi Tamura, Ryuji Kondo, Jin Murayama, Hideki Kosaka, Noboru Maruyama, Toshihiko Komatsu
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Patent number: 5114870Abstract: The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.Type: GrantFiled: May 15, 1989Date of Patent: May 19, 1992Assignee: Hitachi, Ltd.Inventors: Yuji Yatsuda, Takaaki Hagiwara, Ryuji Kondo, Shinichi Minami, Yokichi Itoh
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Patent number: 5072284Abstract: A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results.Type: GrantFiled: August 31, 1990Date of Patent: December 10, 1991Assignee: Fuji Photo Film Co., Ltd.Inventors: Hiroshi Tamura, Ryuji Kondo, Jin Murayama, Hideki Kosaka
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Patent number: 4985775Abstract: An electronic still camera in which every time a solid state pickup element is read out, immediately it is read out again in order to empty out residual charges.Type: GrantFiled: February 13, 1989Date of Patent: January 15, 1991Assignee: Fuji Photo Film Co., Ltd.Inventors: Jin Murayama, Ryuji Kondo
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Patent number: 4974093Abstract: A solid state image-pickup device having an expanded dynamic range so that light reception from a subject having a high light intensity can be carried out without saturation of the light receiving elements of the image-pickup device.Type: GrantFiled: December 22, 1988Date of Patent: November 27, 1990Assignee: Fuji Photo Film Co., Ltd.Inventors: Jin Murayama, Ryuji Kondo
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Patent number: 4930006Abstract: A solid state image pickup element including: an MOS image sensor comprising: photoelectric conversion elements arranged in rows and columns; vertical selection lines extending along the rows; vertical signal lines extending along the columns; a vertical switching device associated with each photoelectric conversion element and controlled by an associated vertical selection line for selectively connecting an output of the associated photoelectric conversion element to an associated vertical signal line; a horizontal switching device associated with each column for selectively connecting an associated vertical signal line to an output line; a vertical shift register for controlling the vertical switching device through the vertical selection lines; and a horizontal shift register for controlling the horizontal switching device. The photoelectric conversion elements are divided into sets of m.times.Type: GrantFiled: March 31, 1987Date of Patent: May 29, 1990Assignee: Fuji Photo Film Co., Ltd.Inventors: Jin Murayama, Yoshimitsu Kudoh, Ryuji Kondo
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Patent number: 4866002Abstract: In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely.Type: GrantFiled: March 21, 1988Date of Patent: September 12, 1989Assignee: Fuji Photo Film Co., Ltd.Inventors: Makoto Shizukuishi, Hideki Mutoh, Ryuji Kondo
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Patent number: 4851364Abstract: The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.Type: GrantFiled: April 10, 1986Date of Patent: July 25, 1989Assignee: Hitachi, Ltd.Inventors: Yuji Yatsuda, Takaaki Hagiwara, Ryuji Kondo, Shinichi Minami, Yokichi Itoh