Abstract: A composition for producing a light emitting device having high light emission efficiency contains: a polymer compound having a repeating unit (Y) and a constitutional unit (SM1) obtained by removing hydrogen atom(s) from a low molecular compound (SM1) in which the absolute value of a difference between the energy levels of the lowest triplet excited state and the lowest singlet excited state is 0.50 eV or less, and a low molecular compound (SM2) in which the absolute value of a difference between the energy levels of the lowest triplet excited state and the lowest singlet excited state is 0.50 eV or less. When dSM1 is the content number per unit mass of the constitutional unit (SM1) and dSM2 is the content number per unit mass of the low molecular compound (SM2), dSM1+dSM2 is 2.0×1019 (number/g) or more and dSM1/dSM2 is 0.020 to 50.

Abstract: A metal complex represented by the formula (1) is useful for production of a light emitting device excellent in light emission efficiency: M represents a rhodium, palladium, iridium, or a platinum atom; n1 represents 1, 2 or 3; n2 represents 0, 1 or 2; R1 to R6 represent a hydrogen atom, an alkyl group, or an aryl group; Ring RB1 and Ring RB2 represent an aromatic hydrocarbon ring or an aromatic hetero ring; one of Ya and Yb is a single bond, and the other is a group represented by the formula (C-1): RC represents a carbon atom, a silicon atom, a germanium atom, a tin atom or a lead atom; Ring RC1 and Ring RC2 represent an aromatic hydrocarbon ring or an aromatic hetero ring; and A1-G1-A2 represents an anionic bidentate ligand.

Abstract: A composition containing a phosphorescent compound represented by the formula (1) and a compound (F) having a condensed hetero ring skeleton containing at least one atom (a) selected from the group consisting of a nitrogen atom and a boron atom in the ring is provided. If the value of the energy level in the lowest triplet excited state of the above-described phosphorescent compound is expressed as Tp (eV), the value of the energy level of the lowest triplet excited state of the above-described compound (F) is expressed as TF (eV) and the number of the above-described atom (a) in the condensed hetero ring skeleton per 1000 of the molecular weight of the above-described compound (F) is expressed as Nf, then, the formula (A) and the formula (B) are satisfied: |TP|?|TF|?0.15??(A) 0.01?Nf?4.

Abstract: A thin film transistor substrate includes a substrate and a bottom gate-type thin film transistor, in which a gate insulating film is provided, a gate electrode is made of a first conductive film disposed on a lower layer side of the gate insulating film, the gate insulating film includes a first insulating portion overlapping the gate electrode and a second insulating portion that is disposed not to overlap the gate electrode but to overlap the source electrode and the drain electrode, and has a film thickness greater than a film thickness of the first insulating portion, and a lower layer portion that is made of a lower layer film disposed on a lower layer side of the first conductive film and has at least a portion overlapping the gate electrode is provided.

Abstract: A metal complex which is useful for production of a light emitting device showing improved luminance is provided. A composition containing the metal complex and a light emitting device containing the metal complex are also provided. The metal complex is represented by the following formula (0). The composition contains the metal complex and at least one material selected from the group consisting of a host material, a light emitting material other than the metal complex, an antioxidant and a solvent, and a light emitting device containing the metal complex.

Abstract: A metal complex which is useful for production of a light emitting device of which long-term degradation is suppressed is provided. The metal complex is represented by the formula (1): wherein, one of Ya and Yb is a single bond, and the other is a group represented by the formula (C-1): and wherein at least one of Ring RA, Ring RB1, Ring RB2, Ring RC1 and Ring RC2 has a group represented by the formula (D-A), the formula (D-B) or the formula (D-C) as a substituent.

Abstract: A composition useful for the production of a light emitting device showing suppressed initial degradation, and a light emitting device formed by using the composition are provided. The composition contains a blended host material and a guest material, in which the host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed, the guest material contains an aromatic amine compound, and the total amount of a silicon atom contained in the host material and a silicon atom contained in the guest material is 20 ppm by mass or less with respect to the total amount of the host material and the guest material.

Abstract: A light emitting device having an anode, a cathode, a first organic layer and a second organic layer disposed between the anode and the cathode is provided.

Abstract: A light emitting device having an anode, a cathode, and an organic layer disposed between the anode and the cathode and containing a composition is described. The composition contains a compound (A) represented by the formula (FH) and a compound (B) having a condensed hetero ring skeleton (b) containing a boron atom and a nitrogen atom in the ring, and the molecular weight (MA) of the compound (A) and the molecular weight (MB) of the compound (B) satisfy the formula (M1-1) and the formula (M2-1).

Abstract: A light emitting device is provided which includes an anode, a cathode, and an organic layer disposed between the anode and the cathode and including a composition containing a thermally activated delayed fluorescent compound (A), a boron atom, and a compound (B) having a condensed hetero ring skeleton. The absolute value (|EB?AA|) of a difference between the energy value of the maximum peak of the emission spectrum at 25° C. of compound (B) and the energy value of a peak at the lowest energy side of the absorption spectrum at 25° C. of compound (A) is 0.60 eV or less. The absolute value of a difference between the energy levels of the lowest triplet and singlet excited states of compound (A) is 0.50 eV or less. The absolute value of a difference between the energy levels of the lowest triplet and singlet excited states of compound (B) is 0.50 eV or less.

Abstract: A composition which is useful for producing a light emitting device having excellent external quantum efficiency and a light emitting device containing the composition are described. The light emitting device contains an anode, a cathode, and an organic layer disposed between the anode and the cathode and contains a composition containing at least two compounds (A) selected from the group consisting of a compound represented by the formula (FH) and a polymer compound containing a constitutional unit having a group obtained by removing from a compound represented by the formula (FH) one or more hydrogen atoms, and a compound (B) having a condensed hetero ring skeleton (b) containing a boron atom and a nitrogen atom in the ring.

Abstract: A light emitting device including an anode, a cathode, and an organic layer disposed between the anode and the cathode and containing a composition is provided. The composition contains two or more compounds (B) having a condensed hetero ring skeleton (b) containing a boron atom and a nitrogen atom in the ring. Compound (B) contains a compound (B1) and a compound (B2) which satisfy at least one of the following formulas: EB1<EB2 and AB1<AB2. EB1 represents the maximum peak wavelength of the emission spectrum at 25° C. of compound (B1), EB2 represents the maximum peak wavelength of the emission spectrum at 25° C. of compound (B2), AB1 represents the peak wavelength at the lowest energy side of the absorption spectrum at 25° C. of compound (B1), and AB2 represents the peak wavelength at the lowest energy side of the absorption spectrum at 25° C. of compound (B2).

Abstract: A composition which is useful for producing a light emitting device having excellent light emission efficiency and a light emitting device containing the composition are described. The light emitting device contains an anode, a cathode, and an organic layer disposed between the anode and the cathode and contains a composition containing a metal complex represented by the formula (2), and a compound (B) having a condensed hetero ring skeleton (b) containing a boron atom and at least one selected from the group consisting of an oxygen atom, a sulfur atom, a selenium atom, an sp3 carbon atom and a nitrogen atom in the ring.

Abstract: A composition which is useful for producing a light emitting device of which initial deterioration is suppressed and a light emitting device formed using the composition are described. The composition contains a host material and a guest material blended therein; the host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed, the guest material contains a compound having a heterocyclic group containing a carbon atom and at least one selected from a boron atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom and a selenium atom in the ring, and the total amount of silicon atoms contained in the host material and in the guest material is over 0 ppm by mass and 28 ppm by mass or less with respect to the total amount of the host material and the guest material.

Abstract: A composition which is useful for production of a light emitting device of which initial deterioration is suppressed, and a light emitting device formed using the composition, are provided. The composition contains a host material and a guest material blended therein. The host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed. The guest material contains an aromatic amine compound. The total amount of sodium atoms contained in the host material and sodium atoms contained in the guest material is 400 ppb by mass or less with respect to the total amount of the host material and the guest material.

Abstract: A light emitting device having an anode, a cathode, a first organic layer disposed between the anode and the cathode and a second organic layer disposed between the anode and the cathode is provided. The first organic layer is a layer containing a compound (T) in which the absolute value of the difference between the energy level at the lowest triplet excited state and the energy level at the lowest singlet excited state is 0.5 eV or less and not containing a phosphorescent metal complex. The second organic layer is a layer containing a crosslinked body of a polymer compound containing a crosslink constitutional unit and the energy level at the lowest triplet excited state of the polymer compound is 2.25 eV or more.

Abstract: A composition for a light-emitting element contains a host material and a guest material. The host material is a compound containing at least one of an aromatic hydrocarbon group and a heterocyclic group and the guest material is a compound having a condensed heterocyclic group containing at least one of a boron atom, an oxygen atom, a sulfur atom, a selenium atom, an sp3 carbon atom, and a nitrogen atom in a ring. A difference ?E between an energy value at the maximum peak of a emission spectrum of the host material at 25° C. and an energy value at a peak on the lowest energy side of an absorption spectrum of the guest material at 25° C. is 0.50 eV or less, and a difference ?S between an energy value at the maximum peak of an emission spectrum of the guest material at 25° C. and an energy value at the maximum peak of an emission spectrum of the guest material at 77 K is 0.10 eV or less.

Abstract: A composition useful for the production of a light emitting device showing suppressed initial degradation, and a light emitting device formed by using the composition are provided. The composition contains a blended host material and a guest material, in which the host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed, the guest material contains an aromatic amine compound, and the total amount of a silicon atom contained in the host material and a silicon atom contained in the guest material is 20 ppm by mass or less with respect to the total amount of the host material and the guest material.

Abstract: A composition for a light-emitting element contains a host material and a guest material. The host material is a compound containing at least one of an aromatic hydrocarbon group and a heterocyclic group and the guest material is a compound having a condensed heterocyclic group containing at least one of a boron atom, an oxygen atom, a sulfur atom, a selenium atom, an sp3 carbon atom, and a nitrogen atom in a ring. A difference ?E between an energy value at the maximum peak of a emission spectrum of the host material at 25° C. and an energy value at a peak on the lowest energy side of an absorption spectrum of the guest material at 25° C. is 0.50 eV or less, and a difference ?S between an energy value at the maximum peak of an emission spectrum of the guest material at 25° C. and an energy value at the maximum peak of an emission spectrum of the guest material at 77 K is 0.10 eV or less.

Abstract: A polymer compound which is useful for producing a light emitting device having excellent luminance life is described. The polymer compound contains a constitutional unit having a residue of a compound represented by the formula (1) and a constitutional unit having no residue of a compound represented by the formula (1): In formula (1), Ring A, Ring B and Ring C represent an aromatic hydrocarbon ring, X represents a boron atom, Y1, Y2 and Y3 represent N-Ry, a sulfur atom or a selenium atom, Ry represents a hydrogen atom, an aryl group, a monovalent heterocyclic group or an alkyl group, and n3 is 0 or 1. When n3 is 0, —Y3— is absent.