Abstract: A method of manufacturing a bonded substrate stack includes a bonding surface processing step of processing at least one of first and second substrates each containing silicon and having a bonding surface, and a bonding step of bonding the bonding surface of the first substrate and the bonding surface of the second substrate. The bonding surface processing step includes an OH group increasing step of increasing OH groups on the bonding surfaces, and a moisture content decreasing step of heating the bonding surfaces where the OH groups have been increased at a temperature falling within a range of 50° C. to 200° C. to decrease moisture contents of the bonding surfaces.

Abstract: In a method of manufacturing a bonded substrate stack by bonding the bonding surfaces of the first and second substrates, a bonding surface having a hydrophobic region and a hydrophilic region is formed by partially processing at least one of the bonding surfaces of the first and second substrates, and then the bonding surfaces of the first and second substrates are bonded to each other.

Abstract: This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer (204b) and semiconductor layer (203b) are in turn formed on a semiconductor member (211) by bonding a first substrate (210) to a second substrate (220), a second step of making the edge portion of an insulating layer (204b) of the structure (230) retreat toward the center so that the edge portion of a semiconductor layer (203c) overhangs the edge portion of an insulating layer (204c), and a third step of moving atoms which form the edge portion of the semiconductor layer (203c) such that the edge portion of a semiconductor layer (203d) covers the periphery of the insulating layer (204c) and connects to the semiconductor member (211).

Abstract: An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

Abstract: An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

Abstract: This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer (204b) and semiconductor layer (203b) are in turn formed on a semiconductor member (211) by bonding a first substrate (210) to a second substrate (220), a second step of making the edge portion of an insulating layer (204b) of the structure (230) retreat toward the center so that the edge portion of a semiconductor layer (203c) overhangs the edge portion of an insulating layer (204c), and a third step of moving atoms which form the edge portion of the semiconductor layer (203c) such that the edge portion of a semiconductor layer (203d) covers the periphery of the insulating layer (204c) and connects to the semiconductor member (211).

Abstract: A method of manufacturing a bonded substrate stack includes a bonding surface processing step of processing at least one of first and second substrates each containing silicon and having a bonding surface, and a bonding step of bonding the bonding surface of the first substrate and the bonding surface of the second substrate. The bonding surface processing step includes an OH group increasing step of increasing OH groups on the bonding surfaces, and a moisture content decreasing step of heating the bonding surfaces where the OH groups have been increased at a temperature falling within a range of 50° C. to 200° C. to decrease moisture contents of the bonding surfaces.

Abstract: A first substrate which has a semiconductor and an insulating layer formed on the surface of the semiconductor is prepared. The periphery of the insulating layer is selectively removed to expose the semiconductor. The first substrate on the insulating layer side is bonded to a second substrate to form a bonded substrate stack.

Abstract: In a substrate manufacturing method of manufacturing a bonded substrate stack by boding the bonding surfaces of the first and second substrates, a bonding surface having a hydrophobic region and a hydrophilic region is formed by partially processing at least one of the bonding surfaces of the first and second substrates, and then the bonding surfaces of the first and second substrates are bonded to each other.

Abstract: An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

Abstract: An emboss pattern processing apparatus for transferring an emboss pattern onto a thermoplastic resin sheet includes an emboss patterning roller and a lustering device having a mirror face member. The emboss patterning roller includes a roller body having a face embossed with the pattern and sealing rings attached on each side face of the roller body. The roller body and the sealing rings have a passage for flowing a cooling medium from one sealing ring through the roller body to the other sealing ring.

Abstract: A method of an emboss pattern process has steps of transferring an emboss pattern onto a thermoplastic resin sheet by using an emboss patterning roller; lustering the opposite face of the embossed face of the thermoplastic resin sheet by using a lustering means having a mirror face member; and peeling the thermoplastic resin sheet from the emboss patterning roller at a lower temperature than a temperature for transferring the emboss pattern. The emboss patterning roller has a roller body, having a face embossed with the pattern, and sealing rings attached on each side face of the roller body, in which the roller body and the sealing ring has a passage for flowing a cooling medium from one sealing ring through the roller body to the other sealing ring.

Abstract: A method of an emboss pattern process has steps of transferring an emboss pattern onto a thermoplastic resin sheet by using an emboss patterning roller; lustering the opposite face of the embossed face of the thermoplastic resin sheet by using a lustering means having a mirror face member; and peeling the thermoplastic resin sheet from the emboss patterning roller at a lower temperature than a temperature for transferring the emboss pattern. The emboss patterning roller has a roller body, having a face embossed with the pattern, and sealing rings attached on each side face of the roller body, in which the roller body and the sealing ring has a passage for flowing a cooling medium from one sealing ring through the roller body to the other sealing ring.

Abstract: Provided is a method for manufacturing a thermoplastic resin sheet bearing an embossed pattern, which employs a manufacturing apparatus having a first roll having an elastic material coated surface, a mirror-faced metal, endless belt, which is wound around the first roll and a second roll, and a third roll so provided that the metal, endless belt is wrapped partially around the third roll, which contacts the first roll via the metal, endless belt and which has an embossed pattern formed on one surface. According to this method, the thermoplastic resin sheet, partially melted, is fed between the metal, endless belt, which contacts the first roll, and the third roll. The elastic member is elastically deformed by application of a pressing force between the first and the third roll, while face pressure welding the thermoplastic sheet by using the first and the third rolls to transfer the embossed pattern and to cool the thermoplastic resin sheet. A surface temperature for the third roll of from 0.degree. C.

Abstract: A thermoplastic resin film is preheated as the temperature T is changed to at a temperature of Tg<T<m.p.-10.degree. C., and absolutely contacted with a belt by being pressed at a linear pressure of 9.8 N/cm-980.0 N/cm (Tg: glass transition temperature of the thermoplastic resin film, m.p.: melting point of the thermoplastic resin film). Next, the thermoplastic resin film is heated as the temperature T is changed to a temperature of m.p.-20.degree. C.<T<m.p.+20.degree. C. while being absolutely contacted with the belt, and successively, the thermoplastic resin film is cooled while being absolutely contacted with the belt, and then the thermoplastic resin film is peeled from the belt.

Abstract: Provided is a method for manufacturing a thermoplastic resin sheet bearing an embossed pattern, which employs a manufacturing apparatus having a first roll having an elastic material coated surface, a mirror-faced metal, endless belt, which is wound around the first roll and a second roll, and a third roll so provided that the metal, endless belt is wrapped partially around the third roll, which contacts the first roll via the metal, endless belt and which has an embossed pattern formed on one surface. According to this method, the thermoplastic resin sheet, partially melted, is fed between the metal, endless belt, which contacts the first roll, and the third roll. The elastic member is elastically deformed by application of a pressing force between the first and the third roll, while face pressure welding the thermoplastic sheet by using the first and the third rolls to transfer the embossed pattern and to cool the thermoplastic resin sheet. A surface temperature for the third roll of from 0° C.