Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage VR to form a depletion layer and a weak voltage V1 to trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the VR to the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage VR to form a depletion layer and a weak voltage V1 to trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the VR to the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve.

Abstract: An aspect of the present invention relates to a method of analyzing an iron concentration of a boron-doped p-type silicon wafer by a SPV method, which comprises subjecting the wafer to Fe—B pair separation processing by irradiation with light and determining the iron concentration based on a change in a minority carrier diffusion length following the separation processing. The iron concentration is calculated with a calculation equation comprising a minority carrier diffusion length LAF1 measured after the separation processing, a minority carrier diffusion length LAF2 measured after a prescribed time has elapsed following measurement of LAF1, and dependence on time of recombination of Fe—B pairs separated by the separation processing. The calculation equation is derived by assuming that the irradiation with light causes boron atoms and oxygen atoms in the wafer to form a bonded product, and by assuming that the bonded product has identical influences on LAF1 and LAF2.

Abstract: A method of evaluating a silicon wafer includes obtaining first surface distribution information indicating an surface distribution of photoluminescence intensity on a surface of a silicon wafer; after obtaining the first surface distribution information, subjecting the silicon wafer to a thermal oxidation treatment, and then obtaining second surface distribution information indicating an surface distribution of photoluminescence intensity on the surface of the silicon wafer; obtaining difference information for the first surface distribution information and third surface distribution information, with the third surface distribution information having been obtained by correcting the second surface distribution information with a correction coefficient of less than 1; and based on the difference information obtained, evaluating an evaluation item selected from the group consisting of absence or presence of oxygen precipitates and surface distribution of oxygen precipitates in the silicon wafer being evaluated.

Abstract: A method of evaluating a silicon wafer includes obtaining first surface distribution information indicating an surface distribution of photoluminescence intensity on a surface of a silicon wafer; after obtaining the first surface distribution information, subjecting the silicon wafer to a thermal oxidation treatment, and then obtaining second surface distribution information indicating an surface distribution of photoluminescence intensity on the surface of the silicon wafer; obtaining difference information for the first surface distribution information and third surface distribution information, with the third surface distribution information having been obtained by correcting the second surface distribution information with a correction coefficient of less than 1; and based on the difference information obtained, evaluating an evaluation item selected from the group consisting of absence or presence of oxygen precipitates and surface distribution of oxygen precipitates in the silicon wafer being evaluated.

Abstract: An aspect of the present invention relates to a method of analyzing an iron concentration of a boron-doped p-type silicon wafer by a SPV method, which comprises subjecting the wafer to Fe—B pair separation processing by irradiation with light and determining the iron concentration based on a change in a minority carrier diffusion length following the separation processing. The iron concentration is calculated with a calculation equation comprising a minority carrier diffusion length LAF1 measured after the separation processing, a minority carrier diffusion length LAF2 measured after a prescribed time has elapsed following measurement of LAF1, and dependence on time of recombination of Fe—B pairs separated by the separation processing. The calculation equation is derived by assuming that the irradiation with light causes boron atoms and oxygen atoms in the wafer to form a bonded product, and by assuming that the bonded product has identical influences on LAF1 and LAF2.