Abstract: In order to measure the temperature of an object to be processed that has a high infrared transparency in a lamp-heater-equipped chamber filled with an erosive gas, the following measures are taken. A groove is formed in a stage for holding a single silicon wafer substrate attached on the top of a lamp heater or in an enclosure made from quartz and the like provided on a light emitting open section side of the lamp heater so that a thermocouple to be embedded does not contact the erosive gas. To address the issue described above, an equivalent of an object to be processed, namely a small piece of a silicon wafer substrate, is bonded to the thermocouple. Prior to temperature measurement, the difference between a measured temperature of a silicon wafer substrate to be measured placed on the surface of the stage and a measured temperature of the small silicon wafer piece is measured. The difference in thermal capacity between the silicon wafer substrate and the silicon wafer substrate piece is corrected.

Abstract: An injection timing measuring method and device require a reduced amount of time for calculation. A reference position signal is generated at a predetermined crank angle within the range of 30.degree. CA to 90.degree. CA prior to TDC. Crank angle signals from a crank angle sensor are used as main measuring increments to measure a period starting from generation of the reference position signal and ending upon generation of an injection signal by a lift sensor provided in an injection valve unit, and another period starting from generation of the reference position signal and ending upon generation of a TDC signal. The injection timing relative to the TDC is provided as a difference between the two periods. Each period is precisely measured by counting crank angle signals generated within the period and by determining the remaining duration from the last-counted signal to generation of the injection or TDC signal as a fraction of the crank angle signal interval.