Patents by Inventor Ryuji Omi

Ryuji Omi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having field stabilization film and method
    Patent number: 7632760
    Abstract: In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.
    Type: Grant
    Filed: April 7, 2005
    Date of Patent: December 15, 2009
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Shanghui Larry Tu, Takeshi Ishiguro, Fumika Kuramae, Ryuji Omi
  • Semiconductor device having field stabilization film and method
    Publication number: 20060226479
    Abstract: In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.
    Type: Application
    Filed: April 7, 2005
    Publication date: October 12, 2006
    Inventors: Shanghui Tu, Takeshi Ishiguro, Fumika Kuramae, Ryuji Omi