Patents by Inventor Ryuji Ooba

Ryuji Ooba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
    Patent number: 8093126
    Abstract: A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: January 10, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuuichiro Mitani, Daisuke Matsushita, Ryuji Ooba, Isao Kamioka, Yoshio Ozawa
  • Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
    Patent number: 7883967
    Abstract: A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: February 8, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuuichiro Mitani, Daisuke Matsushita, Ryuji Ooba, Isao Kamioka, Yoshio Ozawa
  • Nonvolatile semiconductor memory device, semiconductor device and manufactoring method of nonvolatile semiconductor memory device
    Publication number: 20100171169
    Abstract: A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
    Type: Application
    Filed: March 17, 2010
    Publication date: July 8, 2010
    Inventors: Yuuichiro Mitani, Daisuke Matsushita, Ryuji Ooba, Isao Kamioka, Yoshio Ozawa
  • Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
    Publication number: 20070018231
    Abstract: A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
    Type: Application
    Filed: July 24, 2006
    Publication date: January 25, 2007
    Inventors: Yuuichiro Mitani, Daisuke Matsushita, Ryuji Ooba, Isao Kamioka, Yoshio Ozawa