Abstract: Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

Abstract: Disclosed herein is a cutting blade including diamond abrasive grains and boron compound grains. The average grain size of the diamond abrasive grains falls within the range of 5 ?m to 50 ?m. The average grain size of the boron compound grains is greater than ? and less than or equal to ½ of the average grain size of the diamond abrasive grains.

Abstract: Disclosed herein is a cutting blade including diamond abrasive grains and boron compound grains. The average grain size of the diamond abrasive grains falls within the range of 5 ?m to 50 ?m. The average grain size of the boron compound grains is greater than 1/5 and less than or equal to 1/2 of the average grain size of the diamond abrasive grains.

Abstract: An abrasive grindstone that includes diamond abrasive grains and a boron compound and that is for grinding a workpiece, wherein the average particle diameter X of the diamond abrasive grains is in the range of 3 ?m?X?10 ?m, and the average particle diameter ratio Z of the boron compound to the diamond abrasive grains is 0.8?Z?3.0. Preferably, the workpiece is an SiC wafer, and the average particle diameter ratio Z is in the range of 1.2?Z?2.0.

Abstract: An abrasive grindstone for grinding a workpiece is disclosed. The abrasive grindstone includes diamond abrasive grains and a boron compound. The diamond abrasive grains and the boron compound are compounded at a predetermined volume ratio. The average grain size Y of the diamond abrasive grains is set to 0 ?m<Y?50 ?m. The average grain size ratio Z of the boron compound to the diamond abrasive grains is set to 0.8?Z?3.0. Preferably, the workpiece is a silicon wafer, and the average grain size ratio Z is set to 0.8?Z?2.0.

Abstract: One of the principal objectives is to provide a loose mass of single crystalline minute diamond particles for abrasive uses, which is prepared from a coarser crystalline product of a common static ultra high-pressure process. The novel particle abrasive can achieve improvement in both machining efficiency (stock removal per time) and worked surface roughness. An effective method for its production is also provided.