Abstract: Provided herein is an isolated polynucleotide, which encodes alphavirus non-structural proteins nsp1, nsp2, nsp3 and nsp4 and a polypeptide comprising a coronavirus protein fused to a signal sequence and/or transmembrane domain. The coronavirus protein may be the receptor binding domain of the S1 subunit of coronavirus spike (S) protein. The polynucleotide such as RNA is useful for as a vaccine against coronavirus infection, especially, COVID-19 infection.

Abstract: Provided is an alphavirus replicon particle (ARP), which comprises (i) alphavirus structural proteins comprising capsid and/or envelope, and (ii) an alphavirus replicon comprising a polynucleotide encoding alphavirus non-structural proteins nspl, nsp2, nsp3 and nsp4 and at least one gene of interest wherein at least one of capsid, and E3 and E2 in the envelope comprise one or more amino acid alteration but El in the envelope comprises no amino acid alteration.

Abstract: Provided herein is an isolated polynucleotide, which encodes alphavirus non-structural proteins nsp1, nsp2, nsp3 and nsp4 and a polypeptide comprising a coronavirus protein fused to a signal sequence and/or transmembrane domain. The coronavirus protein may be the receptor binding domain of the S1 subunit of coronavirus spike (S) protein. The polynucleotide such as RNA is useful for as a vaccine against coronavirus infection, especially, COVID-19 infection.

Abstract: Provided is an alphavirus replicon particle (ARP), which comprises (i) alphavirus structural proteins comprising capsid and/or envelope, and (ii) an alphavirus replicon comprising a polynucleotide encoding alphavirus non-structural proteins nsp1, nsp2, nsp3 and nap4 and at least one gene of interest wherein at least one of capsid, and E3 and E2 in the envelope comprise one or more amino acid alteration but E1 in the envelope comprises no amino acid alteration.

Abstract: Provided is a submarine branching apparatus including: a power feed switching control circuit configured to convert a relay-switching optical command signal into an electric signal; a relay drive circuit configured to be connected to the power feed switching control circuit, receive the electric signal, and change a power feed path; and an automatic reset circuit configured to be connected to the power feed switching control circuit, receive the electric signal, and reset the power feed switching control circuit. Herein, the automatic reset circuit is connected to the power feed switching control circuit via a first time constant circuit delaying the electric signal.

Abstract: Provided is a wafer housing container capable of preventing rotation and floating of a wafer while high liquid removability is ensured. A wafer housing container includes two or more chassis frames stacked on each other and a wafer holding structure formed between the chassis frames. The wafer holding structure includes a plurality of arms extending from each of the chassis frames on both sides of the wafer holding structure, and sandwiches an outer edge portion of a wafer with the plurality of arms on one of the chassis frames on one side and the plurality of arms on the other one of chassis frames on the other side to hold the wafer.

Abstract: An object is to provide a semiconductor device in which an appearance unevenness is reduced in a metal layer on an electrode. A semiconductor device includes a semiconductor substrate, a front surface electrode, a first metal layer, and a second metal layer. The front surface electrode contains Al. The front surface electrode is provided to a front surface of the semiconductor substrate. The first metal layer contains Ni. The first metal layer is provided on the front surface electrode. The second metal layer contains Ni. The second metal layer is provided on the first metal layer. A surface roughness of the first metal layer is larger than that of the second metal layer.

Abstract: The present disclosure provides a method for treating an inflammatory condition, especially an age related inflammatory condition in a mammalian subject in need thereof, which comprises an effective amount of a virus like particle comprising a viral structural protein and a galectin-3 antigen, a composition or vaccine comprising for the purpose thereof.

Abstract: An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cm?3 or higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.

Abstract: A semiconductor device manufacturing method includes thinning a wafer to form a wafer having an annular protruding portion on a peripheral portion thereof by grinding a central portion of a back surface of the wafer and then performing wet etching on the back surface of the wafer, forming a backside electrode on the back surface of the wafer, performing plating to evenly form a metal film on a portion of the backside electrode on the annular protruding portion, attaching a dicing tape to the metal film, and dicing the wafer having the dicing tape attached thereto.

Abstract: The present invention provides a particle comprising a polypeptide and at least one antigen, and a composition comprising thereof.

Abstract: Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.

Abstract: Provided is a semiconductor device, including: a front-back conduction-type semiconductor element; a front-side electrode formed on the front-back conduction-type semiconductor element; an electroless nickel-containing plating layer formed on the front-side electrode; and an electroless gold plating layer formed on the electroless nickel-containing plating layer, wherein the semiconductor device has a low-nickel concentration layer on a side of the electroless nickel-containing plating layer in contact with the electroless gold plating layer, and wherein the low-nickel concentration layer has a thickness smaller than that of the electroless gold plating layer.

Abstract: Provided is an alphavirus replicon particle (ARP), which comprises (i) alphavirus structural proteins comprising capsid and/or envelope, and (ii) an alphavirus replicon comprising a polynucleotide encoding alphavirus non-structural proteins nsp1, nsp2, nsp3 and nsp4 and at least one gene of interest wherein at least one of capsid, and E3 and E2 in the envelope comprise one or more amino acid alteration but E1 in the envelope comprises no amino acid alteration.

Abstract: Provided herein is an isolated polynucleotide, which encodes alphavirus non-structural proteins nsp1, nsp2, nsp3 and nsp4 and a polypeptide comprising a coronavirus protein fused to a signal sequence and/or transmembrane domain. The coronavirus protein may be the receptor binding domain of the S1 subunit of coronavirus spike (S) protein. The polynucleotide such as RNA is useful for as a vaccine against coronavirus infection, especially, COVID-19 infection.

Abstract: An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cm?3 or higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.

Abstract: A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.

Abstract: Provided is a semiconductor-manufacturing apparatus that forms a plated film having a highly homogeneous thickness on a target surface of a semiconductor wafer through electroless plating. A semiconductor-manufacturing apparatus forms plated films on target surfaces of a plurality of wafers held by a carrier capable of holding the wafers. The semiconductor-manufacturing apparatus includes the following: a rectification mechanism including a rectification plate having a plurality of through-holes, the rectification mechanism being held by the carrier in such a manner that the rectification plate faces the target surface of each wafer; a bath in which a chemical solution for forming each plated film is stored, and in which the carrier, holding the plurality of wafers and the rectification mechanism, is immersed in the chemical solution; and a driver configured to shake the carrier as immersed in the bath with a relative positional relationship between each wafer and the through-holes kept constant.

Abstract: Provided is a method for treating a condition or disease which is one of the indications for opioid use, which comprises administering a combination of: (a) a pharmaceutically effective amount of an opioid, and (b) a pharmaceutically effective amount of a prostaglandin (PG) compound represented by the formula (I): to a patient in need thereof.

Abstract: Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.