Abstract: A plasma processing apparatus of processing a specimen placed on a table disposed inside of a processing chamber by using plasmas formed in the processing chamber in which the table is disposed to an upper portion thereof and comprises thereon a first member in contact with the specimen and a second member disposed below the first member and which comprises;

Abstract: A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.

Abstract: The plasma processing apparatus includes a process chamber for processing a sample, evacuation means for decompressing the process chamber, process gas supply means for supplying a process gas to the process chamber, sample holder means for holding the sample processed in the process chamber, bias applying means for applying a bias potential to the sample holder means, electrostatic chucking means for holding the sample to the sample holder means with electrostatic action, and plasma generator means for generating a plasma in the process chamber, in which the sample holder means has a step on an upper surface thereof, the sample is mounted on the uppermost step, a ring member made of a conductive material to which the bias potential can be applied is provided on a surface lower than the surface on which the sample is mounted, the upper surface of the ring member is at the same level as or below the upper surface of the sample, and the upper surface of the ring member is covered with a member made of a dielect

Abstract: There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

Abstract: There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

Abstract: A semiconductor processing apparatus for processing a semiconductor in a processing chamber separated from the air wherein the processing chamber contains a wafer stage on which there is positioned a wafer sensor module equipped with sensor probes, each sensor probe capable of detecting at least one of electric current, voltage and temperature of an article to be processed and placed on the wafer sensor module, which is carried into the processing chamber by a transporting means for the article to be processed, and detected values by the sensor probes being converted to optical signals and led to outside of the processing chamber, can optimize conditions for processing the article easily and in a short time without lowering throughput.