Abstract: A semiconductor measurement device includes a laser light source generating a fundamental wave having a first wavelength, an objective lens focusing the fundamental wave on a sample surface of a sample, a wavelength filter blocking reflected light corresponding to the fundamental wave that is reflected from the sample surface and transmitting signal light generated by irradiating the fundamental wave to the sample surface, and a first detection unit detecting the signal light passing through the wavelength filter. The first detection unit is located to detect the signal light generated from the sample surface and measures an intensity distribution of the signal light emitted in two or more different emission directions from the sample surface of the sample placed at a fixed position. The signal light includes nonlinear light generated from the sample surface irradiated by the fundamental wave and having a second wavelength which is different from the first wavelength.

Abstract: A charged particle beam device includes a lens barrel having a charged particle source, a sample chamber in which a sample to be irradiated with a charged particle beam is provided, and a heat emission type electron source disposed in the sample chamber and maintained at a lower potential than that of an inner wall of the sample chamber, in which the inside of the sample chamber is cleaned by electrons (e?) emitted from the heat emission type electron source after a heating current is generated by applying a voltage from an electron source power supply. The heat emission type electron source is maintained at a lower potential than that of the inner wall of the sample chamber by applying a negative voltage to the heat emission type electron source using a bias power supply. A magnitude of the negative voltage applied to the heat emission type electron source is preferably about 30 to 1000 V, particularly preferably about 60 to 120 V.

Abstract: A charged particle beam device includes a lens barrel having a charged particle source, a sample chamber in which a sample to be irradiated with a charged particle beam is provided, and a heat emission type electron source disposed in the sample chamber and maintained at a lower potential than that of an inner wall of the sample chamber, in which the inside of the sample chamber is cleaned by electrons (e?) emitted from the heat emission type electron source after a heating current is generated by applying a voltage from an electron source power supply. The heat emission type electron source is maintained at a lower potential than that of the inner wall of the sample chamber by applying a negative voltage to the heat emission type electron source using a bias power supply. A magnitude of the negative voltage applied to the heat emission type electron source is preferably about 30 to 1000 V, particularly preferably about 60 to 120 V.

Abstract: The charged particle beam device includes a charged particle beam source which emits a primary charged particle beam, an objective lens which focuses the primary charged particle beam on a sample, a passage electrode which is formed of a metal material and is disposed between the charged particle beam source and a tip end of the objective lens, a detector which detects a secondary charged particle emitted from the sample, and an electrostatic field electrode which is electrically insulated from the passage electrode. The passage electrode is formed such that the primary charged particle beam passes through the inside of the passage electrode. The electrostatic field electrode is formed to cover an outer periphery of the passage electrode.