Patents by Inventor Ryul Lee

Ryul Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10109617
    Abstract: A solid state drive package is provided. The solid state drive package may include an integrated circuit substrate including: a lower redistribution layer; a first chip and a second chip provided on the lower redistribution layer; and a connection substrate provided on the lower redistribution layer, the connection substrate provided on an outer periphery of the first chip and the second chip; and a plurality of third chips provided on the integrated circuit substrate. The plurality of third chips are electrically connected to the first chip and the second chip via the connection substrate and the lower redistribution layer.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: October 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-Ryul Lee, Boseong Kim, Taeduk Nam, Wangju Lee
  • Patent number: 10100196
    Abstract: Disclosed are a polycarbonate resin composition including 15 to 93% by weight of a polycarbonate-polyorganosiloxane copolymer; 0 to 70% by weight of a bisphenol-derived polycarbonate resin; 5 to 30% by weight of glass fiber surface-treated with epoxysilane; d) 1 to 5% by weight of a core-shell impact modifier; and e) 0.05 to 3% by weight of an epoxysilane additive and a polycarbonate resin composition, and a molded article manufactured therefrom. In accordance with the present disclosure, a polycarbonate resin composition and a molded article manufactured therefrom, and more particularly to a polycarbonate resin composition suitable for satisfying demand for larger area and slimmer electronic products, etc. while providing superior rigidity, chemical resistance, and impact resistance and aesthetic appearance, and a molded article manufactured therefrom are provided.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: October 16, 2018
    Assignee: LG CHEM, LTD.
    Inventors: Su Kyoung Lee, Min Ji Kim, Jong Hyun Lee, Ryul Lee, Sung Tae Ahn
  • Publication number: 20180291400
    Abstract: The present invention provides methods and compositions to improve the efficiency of somatic cell nuclear transfer (SCNT) of human cells and the consequent production of human nuclear transfer ESC (hNT-ESCs). More specifically, the present invention relates to the discovery that trimethylation of Histone H3-Lysine 9 (H3K9me3) in reprogramming resistant regions (RRRs) in the nuclear genetic material of human donor somatic cells prevents efficient human somatic cell nuclear reprogramming or SCNT. The present invention provide methods and compositions to decrease H3K9me3 in methods to improve efficacy of hSCNT by exogenous or overexpression of the demethylase KDM4 family and/or inhibiting methylation of H3K9me3 by inhibiting the histone methyltransferases SUV39h1 and/or SUV39h2.
    Type: Application
    Filed: October 7, 2016
    Publication date: October 11, 2018
    Inventors: Yi ZHANG, Dong Ryul LEE, Shogo MATOBA, Young CHUNG
  • Publication number: 20180282688
    Abstract: Immunocompatible pluripotent stem cells (pSCs), which include cells compatible with different patient populations or patient-specific cells, find wide application in regenerative medicine therapies. Described herein are immunocompatible pSCs generated using techniques such as parthenogenesis resulting in cells possessing desired haplotypes of reduced zygosity, antigenically compatible with multiple patient populations, or nuclear transfer allowing generation of patient-specific cells. Methods described herein related to parthenogenesis, nuclear transfer, or pSC cell line generation. Also described herein are compositions of immunocompatible pSCs and cell lines generated by the aforementioned techniques.
    Type: Application
    Filed: June 6, 2018
    Publication date: October 4, 2018
    Applicant: Sung Kwang Medical Foundation
    Inventors: Young Gie Chung, Dong Ryul Lee
  • Patent number: 10081730
    Abstract: The present invention relates to a polycarbonate-based resin composition and a molded article thereof, and more specifically, to a polycarbonate-based resin composition exhibiting high fluidity and excellent chemical resistance and impact resistance, and a molded article formed therefrom.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: September 25, 2018
    Assignee: LG CHEM, LTD.
    Inventors: Ryul Lee, Su Kyoung Lee, Min Ji Kim, Jong Hyun Lee, Sung Tae Ahn
  • Patent number: 10077360
    Abstract: The present invention relates to a polycarbonate resin composition. According to the present invention, a polycarbonate resin composition, which realizes a high whiteness degree, exhibits less discoloration due to superior heat stability during storage and processing, and has improved fluidity, laser reactivity, and plating adhesion, and a method of preparing the same are provided.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: September 18, 2018
    Assignee: LG CHEM, LTD.
    Inventors: Min Ji Kim, Su Kyoung Lee, Ryul Lee, Sung Ho Lee, Jong Hyun Lee
  • Patent number: 10047223
    Abstract: The present invention relates to a polycarbonate-based resin composition and a molded article thereof, and more specifically, to a polycarbonate-based resin composition exhibiting high fluidity and excellent chemical resistance and impact resistance, and a molded article formed therefrom.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: August 14, 2018
    Assignee: LG CHEM, LTD.
    Inventors: Ryul Lee, Su Kyoung Lee, Min Ji Kim, Jong Hyun Lee, Sung Tae Ahn
  • Publication number: 20180208891
    Abstract: Provided are a storage method and a banking system of cells prepared using somatic cell nuclear transfer (NT) technology with homozygous genotypes of genes of human leukocyte antigen (HLA)-A, HLA-B, HLA-DR, and the like. The banking of NT cell-derived stem cells may be applied to autologous or allogenic patients and can provide transplantable cells and tissue materials for the treatment of various diseases such as diabetes, osteoarthritis, Parkinson's disease, and the like.
    Type: Application
    Filed: July 18, 2016
    Publication date: July 26, 2018
    Applicants: SUNGKWANG MEDICAL FOUNDATION, CHA BIOTECH CO., LTD.
    Inventors: Kwang Yul CHA, Dong Ryul LEE, Young Gie CHUNG, Jihwan SONG, Jin Hee EUM
  • Patent number: 10017733
    Abstract: Immunocompatible pluripotent stem cells (pSCs), which include cells compatible with different patient populations or patient-specific cells, find wide application in regenerative medicine therapies. Described herein are immunocompatible pSCs generated using techniques such as parthenogenesis resulting in cells possessing desired haplotypes of reduced zygosity, antigenically compatible with multiple patient populations, or nuclear transfer allowing generation of patient-specific cells. Methods described herein related to parthenogenesis, nuclear transfer, or pSC cell line generation. Also described herein are compositions of immunocompatible pSCs and cell lines generated by the aforementioned techniques.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: July 10, 2018
    Assignee: Sung Kwang Medical Foundation
    Inventors: Young Gie Chung, Dong Ryul Lee
  • Patent number: 10014173
    Abstract: A semiconductor single crystal structure may include a substrate; a defect trapping stack disposed on the substrate; and a semiconductor single crystal disposed on the defect trapping stack, and having a lattice mismatch with a crystal of the substrate, in which the defect trapping stack may include a first dielectric layer disposed on the substrate, and having at least one first opening, a second dielectric layer disposed on the first dielectric layer, and having at least one second opening, a third dielectric layer disposed on the second dielectric layer, and having at least one third opening, and a fourth dielectric layer disposed on the third dielectric layer, and having at least one fourth opening, and in which the semiconductor single crystal may extend to a region of the substrate defined in the at least one first opening through the at least one first to fourth opening.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: July 3, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Eon Yoon, Chul Kim, Sang Moon Lee, Seung Ryul Lee
  • Patent number: 10007028
    Abstract: A photosensitive resin composition includes (A) a binder resin including an epoxy resin; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a colorant including a dye represented by the following Chemical Formula 1, wherein in the above Chemical Formula 1, each substituent is the same as defined in the detailed description; and (E) a solvent.
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: June 26, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Se-Young Choi, Jae-Young Kwon, Eun-Bi Park, Jung-Sun Lee, Chang-Ryul Lee, Ju-Ho Jung, Mi-Jin Choi, Seung-Jib Choi, Kyung-Hee Hyung
  • Publication number: 20180166352
    Abstract: A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.
    Type: Application
    Filed: August 9, 2017
    Publication date: June 14, 2018
    Inventors: Ji Min Choi, Dong Ryul Lee, Ho Ouk Lee, Ji Young Kim, Chang Hyun Cho
  • Publication number: 20180158718
    Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region including a bit line structure, a bit line spacer and a lower electrode and a peripheral circuit region including first to third impurity regions, forming an interlayer insulating film on the peripheral circuit region, forming a first metal layer on the interlayer insulating film, forming a first trench and a second trench in the first metal layer between the first and second impurity regions, the second trench is disposed between the second and third impurity regions and exposes the interlayer insulating film, forming a first capping pattern on the first trench to form an air gap in the first trench, filling the second trench with a first insulating material, and forming, on the first metal layer, a contact connected to the third impurity region.
    Type: Application
    Filed: August 2, 2017
    Publication date: June 7, 2018
    Inventors: DONG RYUL LEE, Joong Chan SHIN, Dong Jun LEE, Ho Ouk LEE, Ji Min CHOI, Ji Young KIM, Chan Sic YOON, Chang Hyun CHO
  • Publication number: 20180122379
    Abstract: An approach for controlling method of an electronic device is provided. The approach acquires voice information and image information for setting an action to be executed according to a condition, the voice information and the image information being respectively generated from a voice and a behavior associated with the voice of a user. The approach determines an event to be detected according to the condition and a function to be executed according to the action when the event is detected, based on the acquired voice information and the acquired image information. The approach determines at least one detection resource to detect the determined event. In response to the at least one determined detection resource detecting at least one event satisfying the condition, the approach executes the function according to the action.
    Type: Application
    Filed: November 3, 2017
    Publication date: May 3, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-chul SOHN, Gyu-tae PARK, Ki-beom LEE, Jong-ryul LEE
  • Publication number: 20180114727
    Abstract: A CMOS circuit includes a partial GAA nFET and a partial GAA pFET. The nFET and the pFET each include a fin including a stack of nanowire-like channel regions and a dielectric separation region extending completely between first and second nanowire-like channel regions of the stack. The nFET and the pFET each also include a source electrode and a drain electrode on opposite sides of the fin, and a gate stack extending along a pair of sidewalls of the stack of nanowire-like channel regions. The gate stack includes a gate dielectric layer and a metal layer on the gate dielectric layer. The metal layer does not extend between the first and second nanowire-like channel regions. The channel heights of the nanowire-like channel regions of the partial GAA nFET and the partial GAA pFET are different.
    Type: Application
    Filed: November 20, 2017
    Publication date: April 26, 2018
    Inventors: Mark S. Rodder, Borna J. Obradovic, Joon Goo Hong, Seung Hun Lee, Pan Kwi Park, Seung Ryul Lee
  • Publication number: 20180100596
    Abstract: The present invention relates to a safe valve for a high pressure regulator, which includes: a guide body coupled to a valve port prepared at a body of a high pressure regulator; a valve body couple to an upper end part of the guide body to open the valve port when the overpressure occurs in a state that the valve port is closed; a lower spring installed inside the valve body for providing elastic force to the valve body; and a discharging pipe couple to a lower part of the guide body for discharging the fuel upon an opening operation of the valve body, wherein a function for a relief valve to relieve the overpressure by discharging the fuel when the overpressure is generated inside the high pressure regulator and a function for a purge valve separated from the body to discharge fuel inside the high pressure regulator are integrally provided.
    Type: Application
    Filed: December 12, 2016
    Publication date: April 12, 2018
    Inventors: Sang Ryul LEE, Wan Jae JEON, Sung Kyung GI, Sung Gil JANG, Yun Ho JEONG
  • Publication number: 20180026022
    Abstract: A solid state drive package is provided. The solid state drive package may include an integrated circuit substrate including: a lower redistribution layer; a first chip and a second chip provided on the lower redistribution layer; and a connection substrate provided on the lower redistribution layer, the connection substrate provided on an outer periphery of the first chip and the second chip; and a plurality of third chips provided on the integrated circuit substrate. The plurality of third chips are electrically connected to the first chip and the second chip via the connection substrate and the lower redistribution layer.
    Type: Application
    Filed: July 18, 2017
    Publication date: January 25, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-Ryul LEE, Boseong KIM, TAEDUK NAM, WANGJU LEE
  • Publication number: 20170373062
    Abstract: The semiconductor device includes a first multi-channel active pattern protruding from a substrate, and having a first height, a second multi-channel active pattern on the substrate, being spaced apart from the substrate, and having a second height that is less than the first height, and a gate electrode on the substrate, intersecting the first multi-channel active pattern and the second multi-channel active pattern.
    Type: Application
    Filed: April 24, 2017
    Publication date: December 28, 2017
    Inventors: Moon Seung Yang, Dong Chan SUH, Chul KIM, Woo Bin SONG, Ji Eon YOON, Seung Ryul LEE
  • Publication number: 20170321014
    Abstract: The present invention relates to a polycarbonate-based resin composition and a molded article thereof, and more specifically, to a polycarbonate-based resin composition exhibiting improved impact strength (impact resistance) and chemical resistance while including a glass fiber in a relatively small content, and a molded article formed therefrom.
    Type: Application
    Filed: December 3, 2015
    Publication date: November 9, 2017
    Applicant: LG CHEM, LTD.
    Inventors: Su Kyoung LEE, Min Ji KIM, Jong Hyun LEE, Ryul LEE, Sung Tae AHN
  • Publication number: 20170306146
    Abstract: The present invention relates to a polycarbonate-based resin composition and a molded article thereof, and more specifically, to a polycarbonate-based resin composition exhibiting high fluidity and excellent chemical resistance and impact resistance, and a molded article formed therefrom.
    Type: Application
    Filed: December 3, 2015
    Publication date: October 26, 2017
    Applicant: LG CHEM, LTD.
    Inventors: Ryul LEE, Su Kyoung LEE, Min Ji KIM, Jong Hyun LEE, Sung Tae AHN