Abstract: The resist composition exhibits excellent sensitivity, resolution, and LWR when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a patterning process using the same. The resist composition comprises a specific tin compound and an organic solvent exhibits excellent sensitivity, resolution, and LWR when processed by photolithography using high-energy radiation.

Abstract: The negative-tone molecular resist composition comprises an onium salt containing a cation having a cyclic ether site and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR when processed by photolithography using high-energy radiation. The molecular resist composition of the invention meets both high sensitivity and high resolution and is improved in LWR when processed by photolithography using high-energy radiation, especially EB or EUV lithography. The resist composition is quite useful for precise micropatterning.

Abstract: A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom.

Abstract: A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.