Patents by Inventor Ryunosuke HINO

Ryunosuke HINO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230106579
    Abstract: A piezoelectric device includes a membrane portion including a through slot extending through the membrane portion in an up-down direction. A width of the through slot in a single crystal piezoelectric material layer becomes narrower as the through slot extends downward. In the single crystal piezoelectric material layer and a reinforcing layer, a maximum width of the through slot in a layer located on a bottom side is smaller than a minimum width of the through slot in a layer located on a top side.
    Type: Application
    Filed: November 15, 2022
    Publication date: April 6, 2023
    Inventors: Ryunosuke HINO, Shinsuke IKEUCHI
  • Publication number: 20220002142
    Abstract: A cavity SOI substrate that includes a first silicon substrate having a cavity; a second silicon substrate bonded to the first silicon substrate, wherein the second silicon substrate includes a first portion oppositely aligned with the cavity of the first silicon substrate and that is thicker than a second portion of the second silicon substrate that is bonded to the first silicon substrate; and a silicon oxide film interposed between the first silicon substrate and the second silicon substrate.
    Type: Application
    Filed: September 22, 2021
    Publication date: January 6, 2022
    Inventors: Makoto Sawamura, Ryunosuke Hino, Yutaka Kishimoto
  • Publication number: 20210375628
    Abstract: A manufacturing method for a bonded substrate that includes preparing a first substrate having a surface with a projected portion in a central region of the surface, preparing a second substrate, and bonding the first substrate and the second substrate using the projected portion as a bonding surface to be bonded to the second substrate.
    Type: Application
    Filed: August 11, 2021
    Publication date: December 2, 2021
    Inventors: Ryunosuke Hino, Yuzu Kishi, Yutaka Kishimoto
  • Publication number: 20180074091
    Abstract: A piezoresistive sensor includes a first detection beam including a first piezoresistor and a first base in which the first piezoresistor is embedded. The first base includes a depletion layer that surrounds the first piezoresistor, a first region made of a semiconductor having a polarity different from a polarity of the first piezoresistor, and second regions each made of a semiconductor having a polarity different from the polarity of the first piezoresistor and an impurity concentration higher than an impurity concentration of the first region. Each second region is exposed from a corresponding one of side surfaces of the first detection beam. The depletion layer is surrounded by a region defined by the first region and the second regions. Other detection beams have the same structure.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 15, 2018
    Inventors: Ryunosuke HINO, Hiroshi HAMAMURA