Patents by Inventor Ryusuke Kawakami
Ryusuke Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150348781Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.Type: ApplicationFiled: June 8, 2015Publication date: December 3, 2015Inventors: Ryusuke KAWAKAMI, Kenichiro NISHIDA, Norihito KAWAGUCHI, Miyuki MASAKI, Atsushi YOSHINOUCHI
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Patent number: 9058994Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.Type: GrantFiled: December 23, 2013Date of Patent: June 16, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Kenichirou Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi
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Publication number: 20140213071Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.Type: ApplicationFiled: December 23, 2013Publication date: July 31, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke KAWAKAMI, Kenichirou NISHIDA, Norihito KAWAGUCHI, Miyuki MASAKI, Atsushi YOSHINOUCHI
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Patent number: 8629522Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.Type: GrantFiled: September 10, 2012Date of Patent: January 14, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Kenichirou Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi
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Patent number: 8598050Abstract: Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.Type: GrantFiled: June 19, 2009Date of Patent: December 3, 2013Assignee: IHI CorporationInventors: Norihito Kawaguchi, Ryusuke Kawakami, Kenichiro Nishida, Miyuki Masaki, Masaru Morita
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Patent number: 8575515Abstract: A laser annealing apparatus is provided that is capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of the laser light due to fluctuation in the temperature of inert gas. The laser annealing apparatus includes a gas supply unit for supplying inert gas G to at least a laser irradiation area of a workpiece, and a gas temperature controller for regulating the temperature of the inert gas G. The gas temperature controller controls the temperature of the inert gas G supplied to the laser irradiation area so as to decrease a temperature difference between the temperature of the inert gas G and the atmospheric temperature of a space (a room R) that is disposed outside the supply area of the inert gas so the temperature controlled inert gas surrounds the optical path of the laser light.Type: GrantFiled: June 17, 2009Date of Patent: November 5, 2013Assignee: IHI CorporationInventors: Norihito Kawaguchi, Ryusuke Kawakami, Kenichiro Nishida, Jun Izawa, Miyuki Masaki, Masaru Morita
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Patent number: 8569814Abstract: The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array or a light guide and concentrating optical systems or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate can be enhanced as much, it is possible to improve the processing ability of the laser annealing.Type: GrantFiled: August 31, 2011Date of Patent: October 29, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kenichiro Nishida, Ryusuke Kawakami, Norihito Kawaguchi, Miyuki Masaki
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Patent number: 8446924Abstract: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.Type: GrantFiled: March 13, 2012Date of Patent: May 21, 2013Assignee: IHI CorporationInventors: Norihito Kawaguchi, Ryusuke Kawakami, Kenichiro Nishida, Miyuki Masaki, Masaru Morita
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Publication number: 20130005123Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Ryusuke KAWAKAMI, Kenichirou NISHIDA, Norihito KAWAGUCHI, Miyuki MASAKI, Atsushi YOSHINOUCHI
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Patent number: 8339613Abstract: A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.Type: GrantFiled: March 23, 2012Date of Patent: December 25, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Miyuki Masaki
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Patent number: 8299553Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.Type: GrantFiled: November 15, 2010Date of Patent: October 30, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Kenichirou Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi
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Publication number: 20120184055Abstract: A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.Type: ApplicationFiled: March 23, 2012Publication date: July 19, 2012Inventors: Ryusuke Kawakami, Miyuki Masaki
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Publication number: 20120168421Abstract: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.Type: ApplicationFiled: March 13, 2012Publication date: July 5, 2012Applicant: IHI CORPORATIONInventors: Norihito KAWAGUCHI, Ryusuke KAWAKAMI, Kenichiro NISHIDA, Miyuki MASAKI, Masaru MORITA
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Patent number: 8170072Abstract: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.Type: GrantFiled: May 30, 2008Date of Patent: May 1, 2012Assignee: IHI CorporationInventors: Norihito Kawaguchi, Ryusuke Kawakami, Kenichiro Nishida, Miyuki Masaki, Masaru Morita
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Patent number: 8144341Abstract: A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.Type: GrantFiled: October 24, 2011Date of Patent: March 27, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Miyuki Masaki
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Publication number: 20120057613Abstract: The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.Type: ApplicationFiled: August 31, 2011Publication date: March 8, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kenichiro NISHIDA, Ryusuke KAWAKAMI, Norihito KAWAGUCHI, Miyuki MASAKI
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Patent number: 8115137Abstract: In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.Type: GrantFiled: June 12, 2008Date of Patent: February 14, 2012Assignee: IHI CorporationInventors: Norihito Kawaguchi, Ryusuke Kawakami, Kenichiro Nishida, Miyuki Masaki, Masaru Morita, Atsushi Yoshinouchi
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Publication number: 20120033234Abstract: A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.Type: ApplicationFiled: October 24, 2011Publication date: February 9, 2012Inventors: Ryusuke Kawakami, Miyuki Masaki
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Patent number: 8106341Abstract: The irradiation unevenness caused by drift occurring in a beam short-axis direction is reduced without adding a new beam shaping unit and affecting the propagation characteristic of a beam in an optical resonator. A position deviation detector for detecting a position deviation of a laser beam before passing through a beam shaping optical system, an angle deviation detector for detecting an angle deviation of the laser beam before passing through the beam shaping optical system, a deflection mirror for deflecting the laser beam, which is disposed in an optical path between a laser and an object (substrate), and a mirror controller for controlling orientation of the deflection mirror, based on detection data obtained using the position deviation detector and the angle deviation detector so as to eliminate the position deviation from a reference irradiation position in the short-axis direction of a linear beam on a surface to be irradiated.Type: GrantFiled: January 19, 2009Date of Patent: January 31, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Norihito Kawaguchi
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Patent number: 8045184Abstract: A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.Type: GrantFiled: January 28, 2009Date of Patent: October 25, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryusuke Kawakami, Miyuki Masaki