Abstract: The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

Abstract: A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.

Abstract: In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

Abstract: Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

Abstract: The present invention provides a method of manufacturing a high quality oxide superconductor film capable of controlling the film-forming rate and the film composition easily and forming the superconductor film safely and economically, over a wide region and homogeneously, wherein each of elements of R in which R represents one or more of elements selected from the group consisting of Y and lanthanide series rare earth elements, Ba and Cu is vapor deposited in the state of metal on a substrate under a high vacuum of lower than 10.sup.-8 Torr by a vacuum vapor deposition process to form a precursor comprising an amorphous metal and the precursor is oxidized and crystallized by applying a heat treatment without taking out the same into the atmospheric air.

Abstract: Disclosed is an oxide thin film producing method for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

Abstract: A superconductinve magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Abstract: A superconductive magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Abstract: An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the super conductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Abstract: An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Abstract: A superconductive magneto-resistive device is made up of superconductive materials having grain boundaries which act as weak couplings. The superconductive material will change from the superconductive state to the normal state when a magnetic field is applied to the material. The superconductive material can be used in various devices for measuring.

Abstract: A process for preparing a photoelectric conversion film containing one or more compound semiconductor made from Cd and group Vi element comprises coating a paste containing (a) a photoelectric conversion material, (b) a dopant, (c) a flux, (d) an organic binder, and optionally (e) a glass frit on a substrate, and sintering it at 300.degree. C.-800.degree. C. in an inert gas blanket.

Abstract: A method for manufacturing a contact type one-dimensional image sensor, which includes the step of providing a light receiving element portion composed of one or more of Group II-VI compounds semiconductor containing Cd on a substrate, and also providing a matrix wiring portion on the same substrate as that of the light receiving element portion, and the method is characterized by the step of forming an insulating layer for the formation of the matrix wiring portion in such a manner as to cover the light receiving element portion.

Abstract: A method of making a photo-electric converting element which includes the steps of forming a photoconductive layer on an insulative substrate by applying a single substance of Group II-VI compound semiconductors which include Cd, or two or more Group II-VI compound powders; and then baking to form a photoconductive layer having a thickness of 1 to 10 .mu.m and a surface roughness of 0.2 to 1 .mu.m and also having its peripheral edge tapered outwardly with respect to the substrate at an angle not greater than 60.degree. and forming a counterelectrode by the use of a lift-off technique so as to overlay a portion of the photoconductive layer.