Abstract: A power generation module includes a first substrate having a light-transmitting property, a second substrate having a light-transmitting property and facing the first substrate in the thickness direction of the first substrate, and a plurality of submodules positioned between the first substrate and the second substrate, aligned in a direction intersecting the thickness direction. Each submodule includes a base member and a solar cell disposed on the base member. The solar cell includes a first electrode layer stacked on the base member, a semiconductor layer stacked on the first electrode layer, and a second electrode layer stacked on the semiconductor layer.

Abstract: A method for mounting a solar cell module onto a vertical building-material frame, the solar cell module having a photovoltaic layer containing a perovskite compound disposed on a substrate, includes, with the solar cell module having a first mounting member attached to at least one of upper and lower ends of the solar cell module, attaching a second mounting member to at least one of upper and lower portions of the building-material frame, attaching a wire storage section to the second mounting member, and coupling the first mounting member to the second mounting member, and, within the wire storage section, connecting a first lead wire of the solar cell module to a first main wire and connecting a second lead wire of the solar cell module to a second main wire.

Abstract: A power generation module of the present disclosure is a power generation module including a plurality of submodules, the plurality of submodules including a first submodule and a second submodule arranged adjacent to each other in plan view. The plurality of submodules each includes a base substrate and a power-generating section located on a portion of a main surface of the base substrate, the power-generating section having at least a photovoltaic layer supported on the main surface. In plan view, the area ratio of the power-generating section to the main surface in the first submodule is less than the area ratio of the power-generating section to the main surface in the second submodule.

Abstract: A power generation module includes a first substrate, a second substrate having a light-transmitting property, a solar cell located between the first substrate and the second substrate, a sealing member sealing a gap between the first substrate and the second substrate and having an annular shape surrounding the solar cell, and a lead wire connected to the solar cell and passing through the sealing member. The solar cell includes two electrode layers and a semiconductor layer located between the two electrode layers. One of the two electrode layers has a connection connected to the lead wire. The sealing member has a pass-through portion. The lead wire passes through and fixed to the pass-through portion. An internal wiring portion of the lead wire between the connection and the pass-through portion is longer than the shortest distance between the connection and the pass-through portion.

Abstract: A photoelectric conversion element manufacturing method according to the present disclosure includes: (A) forming a first electrode layer on a gas barrier layer; (B) removing a part of the first electrode layer using a pulsed laser to form a through hole penetrating the first electrode layer and including a plurality of holes partially overlapping each other; (C) forming a light absorbing layer on the first electrode layer and on the gas barrier layer exposed by the through hole; and (D) forming a second electrode layer on the light absorbing layer.

Abstract: The solar cell of the present disclosure includes a first electrode, a photoelectric conversion layer, an intermediate layer, a hole transport layer, and a second electrode in this order, wherein the hole transport layer includes a hole transport material and an oxidant, the photoelectric conversion layer includes a perovskite compound containing iodine, and the intermediate layer includes at least one selected from the group consisting of bromide, chloride, and fluoride.

Abstract: The solar cell of the present disclosure includes a first electrode, a photoelectric conversion layer, an intermediate layer, a hole transport layer, and a second electrode in this order, wherein the hole transport layer includes a hole transport material and an oxidant, the photoelectric conversion layer includes a perovskite compound containing iodine, and the intermediate layer includes at least one selected from the group consisting of bromide, chloride, and fluoride.

Abstract: A cleaning liquid which includes 3-alkoxy-3-methyl-1-butanol represented by the following general formula (1); at least one of diethylene glycol monomethyl ether and triethylene glycol monomethyl ether; and quaternary ammonium hydroxide: in which R1 represents an alkyl group having 1 to 5 carbon atoms.

Abstract: A cleaning liquid which includes 3-alkoxy-3-methyl-1-butanol represented by the following general formula (1); at least one of diethylene glycol monomethyl ether and triethylene glycol monomethyl ether; and quaternary ammonium hydroxide: in which R1 represents an alkyl group having 1 to 5 carbon atoms.

Abstract: A perovskite solar cell includes: a first electrode; an electron transport layer on the first electrode, containing a semiconductor; a porous layer on the electron transport layer, containing a porous material; a light-absorbing layer on the porous layer, containing a first compound and a second compound different from the first compound, the first compound having a perovskite structure represented by a compositional formula ABX3 where A represents a monovalent cation, B represents a divalent cation, and X represents a halogen anion, the second compound containing the divalent cation; and a second electrode on the light-absorbing layer. A ratio of a number of moles of the monovalent cation in the light-absorbing layer to a number of moles of the divalent cation in the light-absorbing layer is 0.5 or more and 0.9 or less.

Abstract: A photovoltaic device according to an aspect of the present disclosure includes a first electrode, a second electrode positioned to face the first electrode, a porous titanium oxide layer on a surface of the first electrode facing the second electrode, a first hole transport layer between the porous titanium oxide layer and the second electrode, and a second hole transport layer between the first hole transport layer and the second electrode. The porous titanium oxide layer contains a porous titanium oxide that supports a photosensitizer. The first hole transport layer contains a first redox substance. The second hole transport layer contains a second redox substance. The second redox substance has a redox potential more negative than that of the first redox substance by 0.5 V or more.

Abstract: In a resist composition for supercritical development process, a development process is carried out by supercritical development process without alkali development process, and includes a base resin which is not removed by said supercritical developer in the presence of acid (A) and an acid generator which generates an acid upon activation by light or electromagnetic waves (B).

Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.