Abstract: A semiconductor device includes field-effect transistor having a gate, a drain, and a source. A first clamping circuit is connected between the drain and the gate. The first clamping circuit has a first clamp voltage that is lower than a source-to-drain breakdown voltage of the field-effect transistor. A first resistor in the device has a first end connected to a first node between the first clamping circuit and the gate. A second clamping circuit is connected between the drain and a second end of the first resistor. The second clamping circuit has a second clamp voltage is higher than the first clamp voltage and lower than the source-to-drain breakdown voltage.

Abstract: A semiconductor device includes a first bidirectional diode of a ring shape surrounding a central region and including a first connection section and a second connection section which is provided to the inner side of the ring shape from the first connection section, a semiconductor element in the central region including a first semiconductor element electrode, a second semiconductor element electrode, and a control electrode, the first semiconductor element electrode electrically connected to the first connection section and the second semiconductor element electrode electrically connected to the control electrode, a first resistor including a first resistor electrode and a second resistor electrode, the first resistor electrode electrically connected to the second connection section and the control electrode, a second bidirectional diode electrically connected to the second resistor electrode and to the second semiconductor element electrode, and a second resistor element electrically connected to the secon

Abstract: A semiconductor device includes field-effect transistor having a gate, a drain, and a source. A first clamping circuit is connected between the drain and the gate. The first clamping circuit has a first clamp voltage that is lower than a source-to-drain breakdown voltage of the field-effect transistor. A first resistor in the device has a first end connected to a first node between the first clamping circuit and the gate. A second clamping circuit is connected between the drain and a second end of the first resistor. The second clamping circuit has a second clamp voltage is higher than the first clamp voltage and lower than the source-to-drain breakdown voltage.

Abstract: A semiconductor device includes a first bidirectional diode of a ring shape surrounding a central region and including a first connection section and a second connection section which is provided to the inner side of the ring shape from the first connection section, a semiconductor element in the central region including a first semiconductor element electrode, a second semiconductor element electrode, and a control electrode, the first semiconductor element electrode electrically connected to the first connection section and the second semiconductor element electrode electrically connected to the control electrode, a first resistor including a first resistor electrode and a second resistor electrode, the first resistor electrode electrically connected to the second connection section and the control electrode, a second bidirectional diode electrically connected to the second resistor electrode and to the second semiconductor element electrode, and a second resistor element electrically connected to the secon

Abstract: According to one embodiment, in a semiconductor device, a first semiconductor layer of a first conductivity type is formed on a semiconductor substrate of the first conductivity type. A second semiconductor layer of a second conductivity type is formed on the first semiconductor layer at a central portion except an end portion of the semiconductor substrate. A plurality of belt-shaped control electrodes is formed in parallel through a first insulating film on a surface of the second semiconductor layer. A third semiconductor layer of the first conductivity type selectively is formed on a surface of the second semiconductor layer between the control electrodes. A first electrode is formed on the control electrodes through respective second insulating films and is in contact with the third semiconductor layer. A second electrode is formed on the first semiconductor layer at the end portion of the semiconductor substrate.

Abstract: A semiconductor device comprises an insulated gate field effect transistor and a protection diode. The insulated gate field effect transistor has a gate electrode formed on a gate insulating film, a source and a drain. The source and the drain are formed in a first area of a semiconductor substrate. A first silicon oxide film is formed on a second area of the semiconductor substrate adjacent to the first area. The first silicon oxide film is thicker than the gate insulating film and contains larger amount of impurities than the gate insulating film. A poly-silicon layer is formed on the first silicon oxide film. The protection diode has a plurality of PN-junctions formed in the poly-silicon layer. The protection diode is connected between the gate electrode and the source so as to prevent breakdown of the gate insulating film.

Abstract: A semiconductor device comprises an insulated gate field effect transistor and a protection diode. The insulated gate field effect transistor has a gate electrode formed on a gate insulating film, a source and a drain. The source and the drain are formed in a first area of a semiconductor substrate. A first silicon oxide film is formed on a second area of the semiconductor substrate adjacent to the first area. The first silicon oxide film is thicker than the gate insulating film and contains larger amount of impurities than the gate insulating film. A poly-silicon layer is formed on the first silicon oxide film. The protection diode has a plurality of PN-junctions formed in the poly-silicon layer. The protection diode is connected between the gate electrode and the source so as to prevent breakdown of the gate insulating film.