Abstract: A plasma processing apparatus includes a chamber, an RF power supply, a measuring instrument configured to periodically or continuously determine an RF reflection characteristic at a node between the chamber and the RF power supply, a storage configured to store a static characteristic, and a controller configured to execute a plasma ignition determination sequence. The plasma ignition determination sequence includes comparing the RF reflection characteristic periodically or continuously determined with the static characteristic stored in the storage, determining that a plasma is not ignited in the chamber when a difference between the RF reflection characteristic and the static characteristic is equal to or less than a threshold value, and determining that the plasma is ignited in the chamber when the difference is larger than the threshold value.

Abstract: The plasma-processing apparatus includes a chamber, a substrate support, an antenna, an RF generator, and a controller. The RF generator is configured to generate an RF signal. The controller is configured to control the RF generator to set, in a first period, a power level of a first frequency component of the RF signal to a power level greater than a power level of a second frequency component of the RF signal in order to ignite plasma in the chamber, and set, in a second period, the power level of the second frequency component to a power level greater than the power level of the first frequency component in order to maintain the ignited plasma.

Abstract: A plasma processing apparatus includes a chamber, a substrate support, at least one antenna, and a radio-frequency generator. The chamber includes a dielectric window. The dielectric window is between the substrate support and the antenna. The radio-frequency generator generates first radio-frequency power and second radio-frequency power. The first radio-frequency power has a first frequency. The second radio-frequency power has a second frequency. The dielectric window has a larger dielectric loss at the second frequency than at the first frequency.

Abstract: A controller of a plasma processing apparatus is configured to execute (a1) acquiring a first parameter at an input terminal and/or an output terminal of a first matching circuit, (a2) acquiring a second parameter at an input terminal and/or an output terminal of a second matching circuit, and b) performing a first control operation and a second control operation sequentially and repeatedly. The first control operation sequentially performs tuning of a power level of a first RF signal, a frequency of the first RF signal, and a first variable element in the first matching circuit based on the first parameter acquired in the (a1). The second control operation sequentially performs tuning of a power level of a second RF signal, a frequency of the second RF signal, and a second variable element in the second matching circuit based on the second parameter acquired in the (a2).

Abstract: A control system includes: a specifying part for specifying a model corresponding to a processing apparatus and a control algorithm that generates a control signal for controlling the processing apparatus; a simulator for simulating the state of the processing apparatus with the model; a first control signal generation part for generating a control signal based on the measurement value by using the control algorithm; a second control signal generation part for generating a control signal based on an output value of the simulator by using the control algorithm; a first adjustment part for adjusting a value of a model parameter included in the model; and a second adjustment part for adjusting a value of a control parameter included in the control algorithm so that an evaluation value calculated for the output value of the simulator becomes closer to a target value.

Abstract: A control system includes: a specifying part for specifying a model corresponding to a processing apparatus and a control algorithm that generates a control signal for controlling the processing apparatus; a simulator for simulating the state of the processing apparatus with the model; a first control signal generation part for generating a control signal based on the measurement value by using the control algorithm; a second control signal generation part for generating a control signal based on an output value of the simulator by using the control algorithm; a first adjustment part for adjusting a value of a model parameter included in the model; and a second adjustment part for adjusting a value of a control parameter included in the control algorithm so that an evaluation value calculated for the output value of the simulator becomes closer to a target value.

Abstract: A plasma processing apparatus 10 includes a chamber 17 in which an internal space is provided and a target object carried into the internal space is processed with plasma in the internal space; a high frequency power source 14 configured to supply a high frequency power for plasma generation within the chamber 17; a matching circuit 15 configured to match an impedance of the plasma within the chamber 17 with an impedance of the high frequency power source 14; a signal synchronizer 20 configured to calculate the impedance of the plasma within the chamber 17; a control amount calculator 12 configured to control a frequency and a magnitude of the high frequency power, and an impedance of the matching circuit 15 based on the impedance calculated by the signal synchronizer 20. Further, the signal synchronizer 20 and the control amount calculator 12 are provided on a single substrate 11.

Abstract: A plasma processing apparatus 10 includes a chamber 17 in which an internal space is provided and a target object carried into the internal space is processed with plasma in the internal space; a high frequency power source 14 configured to supply a high frequency power for plasma generation within the chamber 17; a matching circuit 15 configured to match an impedance of the plasma within the chamber 17 with an impedance of the high frequency power source 14; a signal synchronizer 20 configured to calculate the impedance of the plasma within the chamber 17; a control amount calculator 12 configured to control a frequency and a magnitude of the high frequency power, and an impedance of the matching circuit 15 based on the impedance calculated by the signal synchronizer 20. Further, the signal synchronizer 20 and the control amount calculator 12 are provided on a single substrate 11.