Abstract: A control system includes: a specifying part for specifying a model corresponding to a processing apparatus and a control algorithm that generates a control signal for controlling the processing apparatus; a simulator for simulating the state of the processing apparatus with the model; a first control signal generation part for generating a control signal based on the measurement value by using the control algorithm; a second control signal generation part for generating a control signal based on an output value of the simulator by using the control algorithm; a first adjustment part for adjusting a value of a model parameter included in the model; and a second adjustment part for adjusting a value of a control parameter included in the control algorithm so that an evaluation value calculated for the output value of the simulator becomes closer to a target value.

Abstract: A control system includes: a specifying part for specifying a model corresponding to a processing apparatus and a control algorithm that generates a control signal for controlling the processing apparatus; a simulator for simulating the state of the processing apparatus with the model; a first control signal generation part for generating a control signal based on the measurement value by using the control algorithm; a second control signal generation part for generating a control signal based on an output value of the simulator by using the control algorithm; a first adjustment part for adjusting a value of a model parameter included in the model; and a second adjustment part for adjusting a value of a control parameter included in the control algorithm so that an evaluation value calculated for the output value of the simulator becomes closer to a target value.

Abstract: A plasma processing apparatus 10 includes a chamber 17 in which an internal space is provided and a target object carried into the internal space is processed with plasma in the internal space; a high frequency power source 14 configured to supply a high frequency power for plasma generation within the chamber 17; a matching circuit 15 configured to match an impedance of the plasma within the chamber 17 with an impedance of the high frequency power source 14; a signal synchronizer 20 configured to calculate the impedance of the plasma within the chamber 17; a control amount calculator 12 configured to control a frequency and a magnitude of the high frequency power, and an impedance of the matching circuit 15 based on the impedance calculated by the signal synchronizer 20. Further, the signal synchronizer 20 and the control amount calculator 12 are provided on a single substrate 11.

Abstract: A plasma processing apparatus 10 includes a chamber 17 in which an internal space is provided and a target object carried into the internal space is processed with plasma in the internal space; a high frequency power source 14 configured to supply a high frequency power for plasma generation within the chamber 17; a matching circuit 15 configured to match an impedance of the plasma within the chamber 17 with an impedance of the high frequency power source 14; a signal synchronizer 20 configured to calculate the impedance of the plasma within the chamber 17; a control amount calculator 12 configured to control a frequency and a magnitude of the high frequency power, and an impedance of the matching circuit 15 based on the impedance calculated by the signal synchronizer 20. Further, the signal synchronizer 20 and the control amount calculator 12 are provided on a single substrate 11.