Patents by Inventor Ryuta Isobe

Ryuta Isobe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with a fuse
    Patent number: 8426942
    Abstract: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.
    Type: Grant
    Filed: July 21, 2010
    Date of Patent: April 23, 2013
    Assignee: Ricoh Company, Ltd.
    Inventors: Masashi Oshima, Masaya Ohtsuka, Ryuta Isobe
  • SEMICONDUCTOR DEVICE
    Publication number: 20110018092
    Abstract: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.
    Type: Application
    Filed: July 21, 2010
    Publication date: January 27, 2011
    Applicant: RICOH COMPANY, LTD.
    Inventors: Masashi Oshima, Masaya Ohtsuka, Ryuta Isobe