Abstract: A semiconductor device includes a support including a base member having a first main surface facing a thickness direction, a semiconductor element, and a bonding material that bonds the support and the semiconductor element. The bonding material includes a sintered metal portion and a resin portion. The support includes a metal layer located on the first main surface and having a stronger sintered bonding with the sintered metal portion than the base member. The bonding material includes a first portion in contact with the semiconductor element and the metal layer, and a second portion in contact with the semiconductor element and the base member.

Abstract: There is provided a semiconductor device including: a first lead; a first semiconductor element mounted on the first lead; and a sealing resin that covers the first semiconductor element, wherein the first lead includes a first die pad, a second die pad, a third die pad, a first connecting portion, and a second connecting portion, wherein the first die pad has a first main surface and a first back surface facing opposite sides in a thickness direction, and wherein the second die pad is arranged side by side with the first die pad in a first direction orthogonal to the thickness direction, and is located on a side of the first main surface with respect to the first die pad in the thickness direction.

Abstract: A semiconductor device includes a first semiconductor element, a plurality of leads, a plurality of wires and a sealing resin covering the first semiconductor element, the plurality of wires, and at least a part of each of the plurality of leads. The plurality of leads include a first lead. The plurality of wires include a plurality of first wires each having a first bonding portion connected to the first semiconductor element and a second bonding portion connected to the first lead. The first lead includes a first portion extending in an x first direction. The second bonding portions of the plurality of first wires are connected to the first portion and arranged in a plurality of rows along the x direction.

Abstract: The semiconductor device includes a semiconductor element, a first lead, a second lead, a conductive member connected to the semiconductor element and a pad portion, and a sealing resin. The second lead protrudes from the sealing resin in a first direction. The second lead has a metal layer provided on the pad portion and a protrusion protruding in the second direction. The protrusion has a first surface being positioned along the thickness direction, facing a pad portion side in the first direction and being covered by the sealing resin. The first surface has a first end on a root side and a second end on a tip side. The second end is located on a pad portion side as viewed from the first end in the first direction.

Abstract: The present disclosure provides a method for manufacturing a semiconductor device, comprising: a first process of forming a first layer on a main surface of a wafer, wherein the first layer has a reference mark for measuring a positional deviation of a resist relative to a first element pattern for a semiconductor element; a second process of forming the resist on the first layer to cover the reference mark and the first element pattern; a third process of exposing and developing the resist to form a positional deviation determination pattern overlapping the reference mark in a plan view; a peripheral pattern surrounding the positional deviation determination pattern in the plan view; and a second element pattern for the semiconductor element; and a fourth process of determining a positional deviation of the second element pattern with respect to the first element pattern.

Abstract: A semiconductor device includes a first semiconductor element, a first object, a sealing resin and a covering part. The first semiconductor element includes a first electrode. The first object includes a first surface facing the first electrode. The sealing resin covers the first semiconductor element and the first object. The covering part is interposed between the first electrode and the first surface and contains a material having a higher thermal conductivity than the sealing resin.

Abstract: A semiconductor device includes: a first lead; a first semiconductor element mounted on the first lead; and a sealing resin that covers the first semiconductor element, wherein the first lead includes: a first die pad having a first main surface and a first back surface facing opposite sides to each other in a thickness direction; a second die pad arranged side by side with the first die pad in a first direction orthogonal to the thickness direction, and located on a side of the first main surface with respect to the first die pad in the thickness direction; and a connecting portion connected to the first die pad and the second die pad, and wherein the first back surface is exposed from the sealing resin.

Abstract: There is provided a semiconductor device including: a first lead; a first semiconductor element mounted on the first lead; and a sealing resin that covers the first semiconductor element, wherein the first lead includes a first die pad, a second die pad, a third die pad, a first connecting portion, and a second connecting portion, wherein the first die pad has a first main surface and a first back surface facing opposite sides in a thickness direction, and wherein the second die pad is arranged side by side with the first die pad in a first direction orthogonal to the thickness direction, and is located on a side of the first main surface with respect to the first die pad in the thickness direction.

Abstract: A semiconductor device includes: a first lead; a first semiconductor element mounted on the first lead; and a sealing resin that covers the first semiconductor element, wherein the first lead includes: a first die pad having a first main surface and a first back surface; a second die pad arranged side by side with the first die pad and located on a side of the first main surface with respect to the first die pad; and a connecting portion connected to the first die pad and the second die pad, wherein the second die pad has a second main surface and a second back surface, and wherein the connecting portion has a connecting portion main surface connected to the first main surface and the second main surface, and an inhibiting portion arranged on the connecting portion main surface and configured to inhibit a flow of a fluid.

Abstract: A semiconductor device includes: a first lead; a first semiconductor element mounted on the first lead; a sealing resin that covers the first semiconductor element; and a heat transfer member arranged on the first lead, wherein the first lead includes: a first die pad having a first main surface and a first back surface; a second die pad arranged side by side with the first die pad and located on a side of the first main surface with respect to the first die pad; and a connecting portion connected to the first and second die pads, wherein the second die pad has a second main surface facing the same side as the first main surface, and a second back surface facing the same side as the first back surface, and wherein the heat transfer member is arranged on the second back surface and is exposed from the sealing resin.