Patents by Inventor Ryuta Machida

Ryuta Machida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry etching method
    Patent number: 9905431
    Abstract: In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: February 27, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Satoshi Terakura, Masahito Mori, Takao Arase, Ryuta Machida
  • DRY ETCHING METHOD
    Publication number: 20150221518
    Abstract: In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.
    Type: Application
    Filed: July 31, 2014
    Publication date: August 6, 2015
    Inventors: Satoshi Terakura, Masahito Mori, Takao Arase, Ryuta Machida