Abstract: A cutting device a device for cutting a continuous body of an electrode plate, the electrode plate including a current collector plate, a first active material layer, and a second active material layer, the cutting device including: a first process unit that causes a first cutting blade to form an incision in the first active material layer; and a second process unit that causes a second cutting blade to cut the continuous body.

Abstract: A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, a side wall is formed. On the surface of the semiconductor substrate and a surface of the gate electrode, a metal silicide film is formed.

Abstract: An inventive semiconductor device production method is a method for producing a semiconductor device having a metal interconnection by etching a metal film including a lower layer of a first metal material and an upper layer of a second metal material different from the first metal material. In the production method, the upper layer is selectively etched under conditions such that an etching rate for the upper layer is higher than an etching rate for the lower layer. The etching is terminated when the lower layer is exposed. Thereafter, the upper layer is over-etched under conditions such that the etching rate for the upper layer is substantially equal to the etching rate for the lower layer. Then, the lower layer is selectively etched.

Abstract: A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, a side wall is formed. On the surface of the semiconductor substrate and a surface of the gate electrode, a metal silicide film is formed.

Abstract: A support fitting for the heat-resistant block to protect boiler tubes, which protrudes upward at a right angle from the surface of the rib between two boiler tubes, and which is welded on the rib and has a catch to engage with the heat-resistant block on the end. The support fitting is provided with a welding surface to be welded on the rib and shaped narrower by chamfering, and a single globule of a deoxidizing conductive material used as flux is attached to the narrowed welding surface, and is a vertical piece or rod which extends a fixed distance perpendicular from the rib. The support fitting includes a first upper surface being kept horizontal to support a ferrule, which can tightly engage with the ferrule for arc stud welding, thereby the ferrule can shield the welding surface, and a second upper surface which engages with the heat-resistant block.

Abstract: The objective of this invention is to provide a support fitting for a heat-resistant block to protect boiler tubes which can be easily and reliably stud-welded without losing any of its function as a support fitting. The support fitting according to this invention is used to attach to the heat-resistant block to protect boiler tubes. It protrudes upward at a right angle from the surface of the rib between two boiler tubes, and it is welded on the rib. The support fitting has a catch to engage with the heat-resistant block on its end. The support fitting according to this invention is distinguished by the fact that the welding surface of the support fitting to the rib is shaped narrower, and by the fact that a single globule of a deoxidizing conductive material used as flux is attached to the narrowed welding surface.