Abstract: In an embodiment, a wafer level package may be provided. The wafer level package may include a device wafer including a MEMS device, a cap wafer disposed over the device wafer, at least one first interconnect disposed between the device wafer and the cap wafer and configured to provide an electrical connection between the device wafer and the cap wafer, and a conformal sealing ring disposed between the device wafer and the cap wafer and configured to surround the at least one first interconnect and the MEMS device so as to provide a conformally sealed environment for the at least one first interconnect and the MEMS device, wherein the conformal sealing ring may be configured to conform to a respective suitable surface of the device wafer and the cap wafer when the device wafer may be bonded to the cap wafer. A method of forming a wafer level package may also be provided.

Abstract: In an embodiment, a wafer level package may be provided. The wafer level package may include a device wafer including a MEMS device, a cap wafer disposed over the device wafer, at least one first interconnect disposed between the device wafer and the cap wafer and configured to provide an electrical connection between the device wafer and the cap wafer, and a conformal sealing ring disposed between the device wafer and the cap wafer and configured to surround the at least one first interconnect and the MEMS device so as to provide a conformally sealed environment for the at least one first interconnect and the MEMS device, wherein the conformal sealing ring may be configured to conform to a respective suitable surface of the device wafer and the cap wafer when the device wafer may be bonded to the cap wafer. A method of forming a wafer level package may also be provided.

Abstract: An electrostatic vibrator has a vibrating plate including beam-shaped vibrating parts each fixed at opposite ends thereof and configured for electrostatic actuation to perform flexural vibration, and temperature compensation parts connected to the vibrating parts. A silicon oxide film covers each of the vibrating parts but not the temperature compensation parts. A substrate is mounted in parallel relation to the vibrating plate. An oxide layer is disposed between the substrate to the vibrating plate. Electrodes are formed on the substrate and arranged on opposite sides of each of the vibrating parts.

Abstract: A silicon oxide film 113 is formed on the vibrating parts 102 and 103 of an MEMS-type electrostatically-actuated flexural vibrator. At least one structure where no oxide film is formed is provided near the vibrating parts 102 and 103. By employing a structure in which both ends of the structure and both ends of the vibrating parts 102 and 103 are integrally formed, a compressive stress is applied to the vibrating parts 102 and 103. As a result, the frequency temperature characteristics can be improved.