Abstract: A production apparatus for a shaped body containing sedimenting particles and a method for producing a shaped body containing sedimenting particles that can continuously mass-produce shaped bodies containing a fixed amount of sedimenting particles. A production apparatus for a shaped body containing sedimenting particles, the apparatus being provided with an ejection head that ejects a liquid containing sedimenting particles, as a liquid droplet, onto a droplet landing element, and a supply apparatus that supplies the liquid to the ejection head, wherein the supply apparatus includes a storage module that extends in a direction transverse to the vertical direction and that stores the liquid, a supply module that supplies the liquid in the storage module from one end in a central axis direction of the storage module, and an agitation unit that rotates the storage module in a circumferential direction about the central axis of the storage module to agitate the liquid inside the storage module.

Abstract: An optical line sensor reads an inspection object conveyed in a sub-scanning direction by a reading line L extending in a main scanning direction and includes a plurality of light-receiving lenses 11 and a plurality of light-receiving elements. The plurality of light-receiving lenses 11 are arranged along the main scanning direction. The plurality of light-receiving elements are arranged linearly along the main scanning direction, and receive light transmitted through the plurality of light-receiving lenses 11. The plurality of light-receiving lenses 11 are arranged to be separated from each other by a diameter of the light-receiving lens 11 or longer. A plurality of light-receiving elements 121 form at least one row or more of the reading lines L.

Abstract: A plurality of light receiving lenses are arranged along a main scanning direction. A plurality of light receiving elements are arranged in a line along the main scanning direction, and receive light transmitted through the plurality of light receiving lenses. The plurality of light receiving elements form at least two rows of reading lines. The light receiving lenses constitute a telecentric optical system, and a width W1 in a sub-scanning direction is smaller than a width W2 in the main scanning direction.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: A liquid droplet forming apparatus includes an ejection head configured to eject liquid droplets of liquid, in which the ejection head includes a tubular liquid holder that holds the liquid, and a vibration unit that covers one end side of the liquid holder, forms a liquid chamber holding the liquid together with the liquid holder, and ejects the liquid droplets on the basis of an electric signal to be applied, the vibration unit includes a vibration element that vibrates on the basis of the electric signal, a membrane that includes an outlet ejecting the liquid droplets, and a resonator that vibrates on the basis of the vibration of the vibration element and transmits the vibration of the vibration element to the membrane by vibrating itself, and the resonator is a plate that overlaps with the membrane as viewed in a plan view and is in contact with the membrane.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: A semiconductor device includes an insulation layer, a support layer located on the insulation layer and containing a metal, and a semiconductor element bonded to the support layer. The semiconductor element includes an element metal layer facing the support layer. A solid-phase diffusion bonding layer is interposed between the support layer and the element metal layer. The insulation layer is lower in Vickers hardness than the support layer.

Abstract: An optical line sensor reads an inspection object conveyed in a sub-scanning direction by a reading line L extending in a main scanning direction and includes a plurality of light-receiving lenses 11 and a plurality of light-receiving elements. The plurality of light-receiving lenses 11 are arranged along the main scanning direction. The plurality of light-receiving elements are arranged linearly along the main scanning direction, and receive light transmitted through the plurality of light-receiving, lenses 11. The plurality of light-receiving lenses 11 are arranged to be separated from each other by a diameter of the light-receiving lens 11 or longer. A plurality of light-receiving elements 121 form at least one row or more of the reading lines L.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: A ceramic-coated blade of a gas turbine and a method of producing the same, in which the thickening of an Al2O3 layer at the interface between a ceramic layer and a primary layer is sufficiently prevented for a long period of time, thereby positively suppressing the separation of the ceramic layer. Using powder of MCrAlY alloy (Co—32%Ni—21%Cr—8%Al—0.5%Y), a primary layer (alloy coating layer) is formed on a surface of a substrate made of a heat-resistant Ni base alloy (Rene'-80). Further, a heat-resistant ceramic layer, comprising a mixture of ion-conductive ZrO2—8wt. %Y2O3 ceramic and insulative ceramic (e.g. Al2O3), is formed on the alloy coating layer. This mixture has a columnar structure in which columnar crystals are grown by a gas phase in a direction of a thickness of the coating, or a porous structure in which flattened particles brought about from molten particles caused to fly at high velocity are laminated.