Patents by Inventor Ryuuichi Saitou
Ryuuichi Saitou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10367426Abstract: The effect of decreasing the inductance, which cancels the recovery current generated upon the switching operation of the switching element, is enhanced. Provided are a circuit body which has first and second switching elements constituting upper and lower arm circuits and a conductor portions, a metal member, and a relay conductor portion which is arranged to face the metal member with the circuit body interposed therebetween and electrically connected to a terminal connected to any one of conductor portions. An eddy current is induced at the metal member and the relay conductor portion by the recovery current flowing through the conductor portions according to the switching operation of the first and second switching elements.Type: GrantFiled: August 2, 2016Date of Patent: July 30, 2019Assignee: Hitachi Automotive Systems, Ltd.Inventors: Takeshi Tokuyama, Akira Matsushita, Ryuuichi Saitou
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Publication number: 20180278172Abstract: The effect of decreasing the inductance, which cancels the recovery current generated upon the switching operation of the switching element, is enhanced. Provided are a circuit body which has first and second switching elements constituting upper and lower arm circuits and a conductor portions, a metal member, and a relay conductor portion which is arranged to face the metal member with the circuit body interposed therebetween and electrically connected to a terminal connected to any one of conductor portions. An eddy current is induced at the metal member and the relay conductor portion by the recovery current flowing through the conductor portions according to the switching operation of the first and second switching elements.Type: ApplicationFiled: August 2, 2016Publication date: September 27, 2018Inventors: Takeshi TOKUYAMA, Akira MATSUSHITA, Ryuuichi SAITOU
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Patent number: 9150962Abstract: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.Type: GrantFiled: January 21, 2014Date of Patent: October 6, 2015Assignee: JSR CORPORATIONInventors: Tatsuya Sakai, Hideki Nishimura, Masahiro Yamamoto, Hisashi Nakagawa, Ryuuichi Saitou, Hideyuki Aoki, Tsuyoshi Furukawa
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Publication number: 20140134331Abstract: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.Type: ApplicationFiled: January 21, 2014Publication date: May 15, 2014Applicant: JSR CORPORATIONInventors: Tatsuya SAKAI, Hideki NISHIMURA, Masahiro YAMAMOTO, Hisashi NAKAGAWA, Ryuuichi SAITOU, Hideyuki AOKI, Tsuyoshi FURUKAWA
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Patent number: 8278471Abstract: A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.Type: GrantFiled: October 24, 2011Date of Patent: October 2, 2012Assignees: JSR Corporation, Tri Chemical Laboratories Inc.Inventors: Ryuuichi Saitou, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai, Sanshiro Komiya, Naoto Noda, Maki Nishiguchi
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Publication number: 20120101290Abstract: A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.Type: ApplicationFiled: October 24, 2011Publication date: April 26, 2012Applicants: TRI Chemical Laboratories, Inc., JSR CORPORATIONInventors: Ryuuichi SAITOU, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai, Sanshiro Komiya, Naoto Noda, Maki Nishiguchi
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Publication number: 20110082309Abstract: A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.Type: ApplicationFiled: March 30, 2010Publication date: April 7, 2011Applicant: JSR CORPORATIONInventors: Youhei Nobe, Kang-go Chung, Ryuuichi Saitou