Patents by Inventor Ryuuji ETOU

Ryuuji ETOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20170133500
    Abstract: A nitride semiconductor device according to the present disclosure includes a substrate, a p-type GaN layer formed on a main surface of the substrate and made of AlxInyGa1-x-yN containing p-type impurities, where 0?X<1, 0?Y<1, and a Ti film formed on the p-type GaN layer. The Ti film is in a coherent or metamorphic state with respect to the p-type GaN layer.
    Type: Application
    Filed: January 25, 2017
    Publication date: May 11, 2017
    Inventors: Ryuuji ETOU, Takeshi HARADA, Masakazu HAMADA, Tamotsu SHIBATA