Abstract: A novel process for preparation of compounds of formula (I) used in the synthesis of Pinoxaden. The intermediate is a substituted phenyl malonic esters of formula (I), where R is C1-C4 alkyl, straight or branched chain.

Abstract: A prophylactic method for preventing otitis media or Eustachian tube dysfunction, or reducing the severity of symptoms thereof, decreasing the risk of future otitis media, with or without ear infection, and associated effects including acute or permanent hearing loss, speech and balance problems, behavior problems and sleep problems caused by acute, intermittent episodic, recurrent or chronic otitis media, and the need for surgical interventions involving myringotomy such as ear tubes for chronic middle ear effusions, or tympanic membrane perforation for acute drainage of effusion from the middle ear and ventilation of the middle ear, through the nasal delivery of surfactant to the Eustachian tube(s).

Abstract: A system for providing real-time surgery visualization to achieve symmetric results is provided. The system includes at least one imaging device configured to capture at least one image of a first area of a subject during a surgical procedure. The system further includes at least one projector configured to project at least one reflected image onto a second area of the subject located across an axis of symmetry of the subject from the first area of the subject. The at least one reflected image is reflected with respect to the axis of symmetry and the first area of the subject.

Abstract: The present invention relates to a monolithic integrated demultiplexing photoreceiver that is formed on a semi-insulating InP substrate. A frequency routing device is formed on the substrate and includes a first plurality of In/InGaAs semiconductor layers. At least one p-i-n photodiode is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another.

Abstract: The lateral base resistance of a DHBT device is reduced and its high-speed operating characteristics thereby improved by forming a structure that initially includes a relatively thick extrinsic base layer overlying a relatively thin intrinsic base layer. The extrinsic base layer is then etched to form a window in which an emitter layer is deposited. In that way, the growth time for formation of the base-emitter junction is minimized. High-performance devices are thereby realized in a relatively simple process that has advantageous self-alignment features.

Abstract: The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.

Abstract: An optical network unit designed to be connected to incoming and outgoing fibers at a customer location is made in integrated-circuit form. One portion of the integrated circuit functions as an optical splitter, a photodetector and a modulator. Another portion of the circuit serves as an amplifier.

Abstract: An optical network unit designed to be connected to incoming and outgoing fibers at a customer location is made in integrated-circuit form. One portion of the integrated circuit includes a thin-film waveguiding layer and functions as an optical splitter, a photodetector and a modulator. Another portion of the circuit serves as an amplifier..

Abstract: A monolithic integrated photoreceiver comprising a p-i-n photodiode and a heterojunction bipolar transistor is realized in a structural configuration that allows the photonics and electronics to be separately optimized in addition to maintaining materials compatibility. These desirable features are accomplished by growing the epilayers of the photodiode and heterojunction bipolar transistor in a single epitaxial growth run. The p-i-n epilayers of the photodiode are grown first on a non-patterned substrate, followed by the direct epitaxial growth of the heterostructure bipolar transistor over the photodiode structure. Selective wet chemical etching over a portion of the entire structure was used in order to delineate the mesa structures of the p-i-n photodiode and transistor such that no contiguous conductive semiconductor layer exists therebetween.

Abstract: A semiconductor device and method for making same having dielectrically isolated individual elements such as transistors, diodes, et al. Some of the isolated elements having fuses formed integral thereto.

Abstract: A semiconductor device and method for making same having three transistors, NPN, PNP, and junction field effect, concurrently formed integral to a common semiconductor device.