Patents by Inventor S. Daniel Kang

S. Daniel Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • V-groove semiconductor device with buried channel stop
    Patent number: 4271423
    Abstract: An insulated gate field effect transistor has channel stop regions which are separated from the heavily doped drain region so that the sidewall or drain/source to channel stop capacitance is reduced. This is accomplished by a buried outdiffused channel region which also functions as the channel stop in a VMOS transistor.
    Type: Grant
    Filed: January 5, 1979
    Date of Patent: June 2, 1981
    Assignee: Texas Instruments Incorporated
    Inventor: S. Daniel Kang
  • Integrated logic elements with improved speed-power characteristics
    Patent number: 4053923
    Abstract: Transistor logic elements with improved switching speed at a given power. The improvement arises from shunting the current-source transistor in a two-transistor gate by a resistor. The integrated embodiment requires no more area than the conventional structure without the resistor.
    Type: Grant
    Filed: September 23, 1976
    Date of Patent: October 11, 1977
    Assignee: Motorola, Inc.
    Inventor: S. Daniel Kang