Patents by Inventor Ségolène Olivier

Ségolène Olivier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9864255
    Abstract: A waveguide including a substrate, an assembly of semiconductor regions consecutively extending on the substrate along a direction corresponding to a propagation direction of an electromagnetic wave having a wavelength noted ?, the semiconductor regions being electrically alternately doped with a first conductivity type and with a second conductivity type along the propagation direction, a dielectric layer interposed between two consecutive semiconductor regions, at least one pair of consecutive elementary structures having a dimensions along the propagation direction adapted to ? to form a grating where the light propagates with no diffraction effects.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: January 9, 2018
    Assignees: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITÉ PARIS-SUD
    Inventors: Alexis Abraham, Ségolène Olivier, Diego Perez-Galacho, Delphine Marris-Morini, Laurent Vivien
  • Patent number: 9733430
    Abstract: A method of manufacturing an optical waveguide with a vertical slot including the steps of a) providing a substrate successively including an electric insulator layer and a crystalline semiconductor layer, b) forming a trench on the semiconductor layer to expose the electric insulator layer and defining first and second semiconductor areas on either side, step b) being executed so that the first semiconductor area has a lateral edge extending across the entire thickness of the semiconductor layer, c) forming the dielectric layer having the predetermined width across the entire thickness of the lateral edge, the method being remarkable in that the trench formed at step b) is configured so that the second semiconductor area forms a seed layer.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: August 15, 2017
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Marc Fedeli, Alexis Abraham, Ségoléne Olivier, Yann Bogumilowicz, Thomas Magis, Pierre Brianceau
  • Publication number: 20160299402
    Abstract: A waveguide including a substrate, an assembly of semiconductor regions consecutively extending on the substrate along a direction corresponding to a propagation direction of an electromagnetic wave having a wavelength noted ?, the semiconductor regions being electrically alternately doped with a first conductivity type and with a second conductivity type along the propagation direction, a dielectric layer interposed between two consecutive semiconductor regions, at least one pair of consecutive elementary structures having a dimensions along the propagation direction adapted to ?, to form, a grating where the light propagates with, no diffraction effects,
    Type: Application
    Filed: April 12, 2016
    Publication date: October 13, 2016
    Applicants: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITÉ PARIS-SUD
    Inventors: Alexis ABRAHAM, Ségolène OLIVIER, Diego PEREZ-GALACHO, Delphine MARRIS-MORINI, Laurent VIVIEN
  • Publication number: 20160041339
    Abstract: A method of manufacturing an optical waveguide with a vertical slot including the steps of a) providing a substrate successively including an electric insulator layer and a crystalline semiconductor layer, b) forming a trench on the semiconductor layer to expose the electric insulator layer and defining first and second semiconductor areas on either side, step b) being executed so that the first semiconductor area has a lateral edge extending across the entire thickness of the semiconductor layer, c) forming the dielectric layer having the predetermined width across the entire thickness of the lateral edge, the method being remarkable in that the trench formed at step b) is configured so that the second semiconductor area forms a seed layer.
    Type: Application
    Filed: August 11, 2015
    Publication date: February 11, 2016
    Inventors: Jean-Marc FEDELI, Alexis ABRAHAM, Ségoléne OLIVIER, Yann BOGUMILOWICZ, Thomas MAGIS, Pierre BRIANCEAU
  • Patent number: 7110641
    Abstract: A device for directional and wavelength-selective optical coupling formed in a photonic crystal (12) and comprising two parallel waveguides (14, 16) separated by a coupling zone (18) enabling a particular frequency to be extracted from a signal (30) injected in fundamental mode into one of the waveguide (14) and to recover said frequency at the outlet (34) of the other waveguide (16), extraction and injection being performed by coupling between fundamental and high order modes in each waveguide.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: September 19, 2006
    Assignees: Centre National de la Recherche Scientifique, Ecole Polytechnique
    Inventors: Henri Benisty, Ségolène Olivier, Claude Weisbuch
  • Publication number: 20050152649
    Abstract: A device for directional and wavelength-selective optical coupling formed in a photonic crystal (12) and comprising two parallel waveguides (14, 16) separated by a coupling zone (18) enabling a particular frequency to be extracted from a signal (30) injected in fundamental mode into one of the waveguide (14) and to recover said frequency at the outlet (34) of the other waveguide (16), extraction and injection being performed by coupling between fundamental and high order modes in each waveguide.
    Type: Application
    Filed: December 22, 2004
    Publication date: July 14, 2005
    Inventors: Henri Benisty, Segolene Olivier, Claude Weisbuch