Abstract: A SiOC layer and/or a SiC layer of an etch stop layer may be improved by altering the process used to form them. In a bi-layer structure, a SiOC layer and/or a SiC layer may be improved to provide better reliability. A silicon carbide (SiC) layer may be used to form a single-layer etch stop layer, while also acting as a glue layer to improve interface adhesion. Preferably, the SiC layer is formed in a reaction chamber having a flow of substantially pure trimetholsilane (3MS) streamed into and through the reaction chamber under a pressure of less than about 2 torr therein. Preferably, the reaction chamber is energized with high frequency RF power of about 100 watts or more. Preferably, the SiOC layer is formed in a reaction chamber having a flow of 3MS and CO2, and is energized with low frequency RF power of about 100 watts or more.

Abstract: A Quality-of-Service-enabled access point (QAP) broadcasts an initial number of time slots and an upper limit to a Quality-of-Service-enabled station (QSTA). The QSTA generates a random number between 0 and 1. The QSTA selects a time slot from the initial number of time slots for data transmission contention and issues a TXOP reservation request to the QAP in the time slot if the random number is lower than the upper limit. The QAP generates a reservation result. The QAP broadcasts the reservation result to the QSTA if more than one QSTA issued reservation requests in the same time slot. The QSTA selects a new time slot for data transmission contention and issues a new TXOP reservation request to the QAP in the new time slot if the previous reservation is not successful according to the reservation result.