Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame, including leads, is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: Semiconductor device structures include protective layers that are formed from healable or healed materials. The healable materials are configured to eliminate cracks and delamination, including singulation-induced cracks and delamination. The protective layers may be formed by applying a layer of protective material to surfaces of semiconductor device components that are carried by a fabrication substrate. The layer of protective material is then severed and the fabrication substrate is at least partially severed. Cracks and delaminated regions that are formed during severing are then healed. If a curable polymer is employed as the protective material, it may be partially cured before severing is effected, then self-healed before being fully cured. Alternatively, a thermoplastic material may be used as the protective material, with healing being effected by heating at least regions of the thermoplastic material.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.